Atomic Structures and Electronic Properties of Semiconductor Interfaces

Takashi Nakayama, Yoshihiro Kangawa, Kenji Shiraishi

Research output: Chapter in Book/Report/Conference proceedingChapter

16 Citations (Scopus)
Original languageEnglish
Title of host publicationComprehensive Semiconductor Science and Technology
EditorsPallab Bhattacharya, Roberto Fornari, Hiroshi Kamimura
PublisherElsevier Inc.
Pages113-174
Number of pages62
Volume1
Edition1
ISBN (Electronic)9780080932286, 9780444531537
ISBN (Print)9780444531438
Publication statusPublished - Jan 28 2011

Cite this

Nakayama, T., Kangawa, Y., & Shiraishi, K. (2011). Atomic Structures and Electronic Properties of Semiconductor Interfaces. In P. Bhattacharya, R. Fornari, & H. Kamimura (Eds.), Comprehensive Semiconductor Science and Technology (1 ed., Vol. 1, pp. 113-174). [1.04] Elsevier Inc..

Atomic Structures and Electronic Properties of Semiconductor Interfaces. / Nakayama, Takashi; Kangawa, Yoshihiro; Shiraishi, Kenji.

Comprehensive Semiconductor Science and Technology. ed. / Pallab Bhattacharya; Roberto Fornari; Hiroshi Kamimura. Vol. 1 1. ed. Elsevier Inc., 2011. p. 113-174 1.04.

Research output: Chapter in Book/Report/Conference proceedingChapter

Nakayama, T, Kangawa, Y & Shiraishi, K 2011, Atomic Structures and Electronic Properties of Semiconductor Interfaces. in P Bhattacharya, R Fornari & H Kamimura (eds), Comprehensive Semiconductor Science and Technology. 1 edn, vol. 1, 1.04, Elsevier Inc., pp. 113-174.
Nakayama T, Kangawa Y, Shiraishi K. Atomic Structures and Electronic Properties of Semiconductor Interfaces. In Bhattacharya P, Fornari R, Kamimura H, editors, Comprehensive Semiconductor Science and Technology. 1 ed. Vol. 1. Elsevier Inc. 2011. p. 113-174. 1.04
Nakayama, Takashi ; Kangawa, Yoshihiro ; Shiraishi, Kenji. / Atomic Structures and Electronic Properties of Semiconductor Interfaces. Comprehensive Semiconductor Science and Technology. editor / Pallab Bhattacharya ; Roberto Fornari ; Hiroshi Kamimura. Vol. 1 1. ed. Elsevier Inc., 2011. pp. 113-174
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