Atomic structures and energetics of 90°dislocation cores in Ge films on Si(001)

Yoshitaka Fujimoto, Atsushi Oshiyama

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

We report on atomic structures and energetics of 90°dislocation cores in Ge films on Si(001) substrates on the basis of the first-principles total-energy calculations. The dislocation core structure consisting of a row of pairs of five- and seven-membered Ge rings is proposed and found to be stable with increasing Ge overlayers. The scanning tunneling microscopy images of the 90°dislocation core structure are calculated and show the possibility to observe the proposed core structure.

Original languageEnglish
Article number205309
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number20
DOIs
Publication statusPublished - May 7 2010
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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