Abstract
High-quality Ge-on-insulator (GOI) is a key structure for integrating high-speed transistors and optical- and spintronic-devices on Si-platform. Effects of coalescence of two growth-fronts on crystallinity of GOI-stripes during rapid-melting lateral-crystallization are investigated as a function of growth-distance. For long growth-distance (≥150 μm), grain-boundaries are generated in coalesced regions due to tilting growth-fronts (1-3°). On the other hand, for short distance (≤5 μm), lattice-structures coherently align without strains. Moreover, for intermediate distance (5-150 μm), lattice-structures of growth-fronts coherently align without any defects, though heterogeneous lattice-strains are locally induced due to slightly tilting growth-fronts (∼0.5°). Such atomically-coherentcoalescence for growth-distance <150 μm shows significant advantage of rapid-melting-crystallization over vapor and solid-phase techniques.
| Original language | English |
|---|---|
| Journal | ECS Journal of Solid State Science and Technology |
| Volume | 2 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Nov 18 2013 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
Cite this
Atomically-coherent-coalescence of two growth-fronts in Ge stripes on insulator by rapid-melting lateral-crystallization. / Kurosawa, Masashi; Toko, Kaoru; Sadoh, Taizoh; Mizushim, Ichiro; Miyao, Masanobu.
In: ECS Journal of Solid State Science and Technology, Vol. 2, No. 3, 18.11.2013.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Atomically-coherent-coalescence of two growth-fronts in Ge stripes on insulator by rapid-melting lateral-crystallization
AU - Kurosawa, Masashi
AU - Toko, Kaoru
AU - Sadoh, Taizoh
AU - Mizushim, Ichiro
AU - Miyao, Masanobu
PY - 2013/11/18
Y1 - 2013/11/18
N2 - High-quality Ge-on-insulator (GOI) is a key structure for integrating high-speed transistors and optical- and spintronic-devices on Si-platform. Effects of coalescence of two growth-fronts on crystallinity of GOI-stripes during rapid-melting lateral-crystallization are investigated as a function of growth-distance. For long growth-distance (≥150 μm), grain-boundaries are generated in coalesced regions due to tilting growth-fronts (1-3°). On the other hand, for short distance (≤5 μm), lattice-structures coherently align without strains. Moreover, for intermediate distance (5-150 μm), lattice-structures of growth-fronts coherently align without any defects, though heterogeneous lattice-strains are locally induced due to slightly tilting growth-fronts (∼0.5°). Such atomically-coherentcoalescence for growth-distance <150 μm shows significant advantage of rapid-melting-crystallization over vapor and solid-phase techniques.
AB - High-quality Ge-on-insulator (GOI) is a key structure for integrating high-speed transistors and optical- and spintronic-devices on Si-platform. Effects of coalescence of two growth-fronts on crystallinity of GOI-stripes during rapid-melting lateral-crystallization are investigated as a function of growth-distance. For long growth-distance (≥150 μm), grain-boundaries are generated in coalesced regions due to tilting growth-fronts (1-3°). On the other hand, for short distance (≤5 μm), lattice-structures coherently align without strains. Moreover, for intermediate distance (5-150 μm), lattice-structures of growth-fronts coherently align without any defects, though heterogeneous lattice-strains are locally induced due to slightly tilting growth-fronts (∼0.5°). Such atomically-coherentcoalescence for growth-distance <150 μm shows significant advantage of rapid-melting-crystallization over vapor and solid-phase techniques.
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U2 - 10.1149/2.005303jss
DO - 10.1149/2.005303jss
M3 - Article
AN - SCOPUS:84887476549
VL - 2
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 3
ER -