Atomically-coherent-coalescence of two growth-fronts in Ge stripes on insulator by rapid-melting lateral-crystallization

Masashi Kurosawa, Kaoru Toko, Taizoh Sadoh, Ichiro Mizushim, Masanobu Miyao

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

High-quality Ge-on-insulator (GOI) is a key structure for integrating high-speed transistors and optical- and spintronic-devices on Si-platform. Effects of coalescence of two growth-fronts on crystallinity of GOI-stripes during rapid-melting lateral-crystallization are investigated as a function of growth-distance. For long growth-distance (≥150 μm), grain-boundaries are generated in coalesced regions due to tilting growth-fronts (1-3°). On the other hand, for short distance (≤5 μm), lattice-structures coherently align without strains. Moreover, for intermediate distance (5-150 μm), lattice-structures of growth-fronts coherently align without any defects, though heterogeneous lattice-strains are locally induced due to slightly tilting growth-fronts (∼0.5°). Such atomically-coherentcoalescence for growth-distance <150 μm shows significant advantage of rapid-melting-crystallization over vapor and solid-phase techniques.

Original languageEnglish
JournalECS Journal of Solid State Science and Technology
Volume2
Issue number3
DOIs
Publication statusPublished - Nov 18 2013

Fingerprint

Crystallization
Coalescence
Melting
Magnetoelectronics
Transistors
Grain boundaries
Vapors
Defects

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Atomically-coherent-coalescence of two growth-fronts in Ge stripes on insulator by rapid-melting lateral-crystallization. / Kurosawa, Masashi; Toko, Kaoru; Sadoh, Taizoh; Mizushim, Ichiro; Miyao, Masanobu.

In: ECS Journal of Solid State Science and Technology, Vol. 2, No. 3, 18.11.2013.

Research output: Contribution to journalArticle

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