Atomically-controlled Fe3Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application

Masanobu Miyao, Yuichiro Ando, Koji Ueda, Kohei Hamaya, Yukio Nozaki, Taizoh Sadoh, Kimihide Matsuyama, Kazumasa Narumi, Yoshihito Maeda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recent our progress in low temperature molecular beam epitaxy of magnetic silicide (Fe3Si) on group-IV-semiconductor (Ge) was reviewed. By optimizing beam flux ratio (Fe:Si=3:l) and growth temperature (130 °C), a high quality hybrid structure, i.e., DO3-type Fe3Si on Ge with an atomically flat interface, was achieved. Excellent magnetic properties with a small coercivity (0.8 Oe) and electrical properties with Schottky barrier height of 0.56 eV were obtained. The ratio of the on-current to the off-current of Schottky diode was the order of 104. These results will be a powerful tool to open up group-IV-semiconductor spin-transistors, consisting of Ge channel with high mobility and Fe3Si source/drain for spin-injection.

Original languageEnglish
Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages688-691
Number of pages4
DOIs
Publication statusPublished - Dec 1 2008
Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
Duration: Oct 20 2008Oct 23 2008

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
CountryChina
CityBeijing
Period10/20/0810/23/08

Fingerprint

hybrid structures
Transistors
transistors
Semiconductor materials
Growth temperature
Schottky diodes
Coercive force
Molecular beam epitaxy
coercivity
Magnetic properties
Diodes
Electric properties
molecular beam epitaxy
electrical properties
injection
Fluxes
magnetic properties
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Miyao, M., Ando, Y., Ueda, K., Hamaya, K., Nozaki, Y., Sadoh, T., ... Maeda, Y. (2008). Atomically-controlled Fe3Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 688-691). [4734647] https://doi.org/10.1109/ICSICT.2008.4734647

Atomically-controlled Fe3Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application. / Miyao, Masanobu; Ando, Yuichiro; Ueda, Koji; Hamaya, Kohei; Nozaki, Yukio; Sadoh, Taizoh; Matsuyama, Kimihide; Narumi, Kazumasa; Maeda, Yoshihito.

ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 688-691 4734647.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Miyao, M, Ando, Y, Ueda, K, Hamaya, K, Nozaki, Y, Sadoh, T, Matsuyama, K, Narumi, K & Maeda, Y 2008, Atomically-controlled Fe3Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application. in ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings., 4734647, pp. 688-691, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, Beijing, China, 10/20/08. https://doi.org/10.1109/ICSICT.2008.4734647
Miyao M, Ando Y, Ueda K, Hamaya K, Nozaki Y, Sadoh T et al. Atomically-controlled Fe3Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 688-691. 4734647 https://doi.org/10.1109/ICSICT.2008.4734647
Miyao, Masanobu ; Ando, Yuichiro ; Ueda, Koji ; Hamaya, Kohei ; Nozaki, Yukio ; Sadoh, Taizoh ; Matsuyama, Kimihide ; Narumi, Kazumasa ; Maeda, Yoshihito. / Atomically-controlled Fe3Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application. ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. pp. 688-691
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