Atomically controlled hetero-epitaxy of Fe3Si/SiGe for spintronics application

Masanobu Miyao, Koji Ueda, Yu ichiro Ando, Mamoru Kumano, Taizoh Sadoh, Kazumasa Narumi, Yoshihito Maeda

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7 Citations (Scopus)

Abstract

Molecular beam epitaxy of the ferromagnetic silicide Fe3Si on Ge and Si substrates was investigated in a wide temperature range (60-400 °C). Epitaxial growth of Fe3Si layers was achieved on Ge (110), Ge (111), and Si (111) substrates. Especially, very low value (2.2%) of the minimum scattering yield in RBS measurements was obtained from Fe3Si layers, which were grown on Ge (111) at low temperature (60-130 °C) under the stoichiometric condition (Fe:Si = 3:1). Transmission electron microscopy measurements confirmed the formation of DO3-type Fe3Si and atomically flat interface between Fe3Si and Ge (111). In addition, thermal stability of Fe3Si was guaranteed up to 300 °C. Such high quality Fe3Si on Ge (111) substrates can be employed to realize Ge channel spin transistors, which can be integrated with Si large-scale integrated circuits.

Original languageEnglish
Pages (from-to)181-183
Number of pages3
JournalThin Solid Films
Volume517
Issue number1
DOIs
Publication statusPublished - Nov 3 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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