Atomically controlled hetero-epitaxy of Fe3Si/SiGe for spintronics application

Masanobu Miyao, Koji Ueda, Yu ichiro Ando, Mamoru Kumano, Taizoh Sadoh, Kazumasa Narumi, Yoshihito Maeda

Research output: Contribution to journalArticle

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Abstract

Molecular beam epitaxy of the ferromagnetic silicide Fe3Si on Ge and Si substrates was investigated in a wide temperature range (60-400 °C). Epitaxial growth of Fe3Si layers was achieved on Ge (110), Ge (111), and Si (111) substrates. Especially, very low value (2.2%) of the minimum scattering yield in RBS measurements was obtained from Fe3Si layers, which were grown on Ge (111) at low temperature (60-130 °C) under the stoichiometric condition (Fe:Si = 3:1). Transmission electron microscopy measurements confirmed the formation of DO3-type Fe3Si and atomically flat interface between Fe3Si and Ge (111). In addition, thermal stability of Fe3Si was guaranteed up to 300 °C. Such high quality Fe3Si on Ge (111) substrates can be employed to realize Ge channel spin transistors, which can be integrated with Si large-scale integrated circuits.

Original languageEnglish
Pages (from-to)181-183
Number of pages3
JournalThin Solid Films
Volume517
Issue number1
DOIs
Publication statusPublished - Nov 3 2008

Fingerprint

Magnetoelectronics
Epitaxial growth
epitaxy
Substrates
Molecular beam epitaxy
integrated circuits
Integrated circuits
Transistors
Thermodynamic stability
thermal stability
transistors
molecular beam epitaxy
Scattering
Transmission electron microscopy
Temperature
transmission electron microscopy
scattering
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Miyao, M., Ueda, K., Ando, Y. I., Kumano, M., Sadoh, T., Narumi, K., & Maeda, Y. (2008). Atomically controlled hetero-epitaxy of Fe3Si/SiGe for spintronics application. Thin Solid Films, 517(1), 181-183. https://doi.org/10.1016/j.tsf.2008.08.055

Atomically controlled hetero-epitaxy of Fe3Si/SiGe for spintronics application. / Miyao, Masanobu; Ueda, Koji; Ando, Yu ichiro; Kumano, Mamoru; Sadoh, Taizoh; Narumi, Kazumasa; Maeda, Yoshihito.

In: Thin Solid Films, Vol. 517, No. 1, 03.11.2008, p. 181-183.

Research output: Contribution to journalArticle

Miyao, M, Ueda, K, Ando, YI, Kumano, M, Sadoh, T, Narumi, K & Maeda, Y 2008, 'Atomically controlled hetero-epitaxy of Fe3Si/SiGe for spintronics application', Thin Solid Films, vol. 517, no. 1, pp. 181-183. https://doi.org/10.1016/j.tsf.2008.08.055
Miyao, Masanobu ; Ueda, Koji ; Ando, Yu ichiro ; Kumano, Mamoru ; Sadoh, Taizoh ; Narumi, Kazumasa ; Maeda, Yoshihito. / Atomically controlled hetero-epitaxy of Fe3Si/SiGe for spintronics application. In: Thin Solid Films. 2008 ; Vol. 517, No. 1. pp. 181-183.
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