TY - JOUR
T1 - Atomically flat planarization of Ge(100), (110), and (111) surfaces in H2 annealing
AU - Nishimura, Tomonori
AU - Kabuyanagi, Shoichi
AU - Zhang, Wenfeng
AU - Lee, Choong Hyun
AU - Yajima, Takeaki
AU - Nagashio, Kosuke
AU - Toriumi, Akira
PY - 2014/5
Y1 - 2014/5
N2 - We demonstrate that Ge(100), (110), and (111) Ge surfaces are planarized with atomic level step and terrace structures in H2 annealing. The temperature required for such planarization is different among the three orientations. The step edge structure on the Ge(100) surface is composed of alternate smooth and rough steps (Sa + Sb steps) owing to the (2 × 1) reconstruction on that surface. It is also shown that the terrace widths on the Ge(110) and (111) surfaces are on average controlled by adjusting the off-angle from the respective surface orientation.
AB - We demonstrate that Ge(100), (110), and (111) Ge surfaces are planarized with atomic level step and terrace structures in H2 annealing. The temperature required for such planarization is different among the three orientations. The step edge structure on the Ge(100) surface is composed of alternate smooth and rough steps (Sa + Sb steps) owing to the (2 × 1) reconstruction on that surface. It is also shown that the terrace widths on the Ge(110) and (111) surfaces are on average controlled by adjusting the off-angle from the respective surface orientation.
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U2 - 10.7567/APEX.7.051301
DO - 10.7567/APEX.7.051301
M3 - Article
AN - SCOPUS:84904595918
SN - 1882-0778
VL - 7
JO - Applied Physics Express
JF - Applied Physics Express
IS - 5
M1 - 051301
ER -