Atomically flat planarization of Ge(100), (110), and (111) surfaces in H2 annealing

Tomonori Nishimura; Shoichi Kabuyanagi; Wenfeng Zhang; Choong Hyun Lee; Takeaki Yajima; Kosuke Nagashio; Akira Toriumi

doi:10.7567/APEX.7.051301

Atomically flat planarization of Ge(100), (110), and (111) surfaces in H₂ annealing

Tomonori Nishimura, Shoichi Kabuyanagi, Wenfeng Zhang, Choong Hyun Lee, Takeaki Yajima, Kosuke Nagashio, Akira Toriumi

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We demonstrate that Ge(100), (110), and (111) Ge surfaces are planarized with atomic level step and terrace structures in H₂ annealing. The temperature required for such planarization is different among the three orientations. The step edge structure on the Ge(100) surface is composed of alternate smooth and rough steps (S_a + S_b steps) owing to the (2 × 1) reconstruction on that surface. It is also shown that the terrace widths on the Ge(110) and (111) surfaces are on average controlled by adjusting the off-angle from the respective surface orientation.

Original language	English
Article number	051301
Journal	Applied Physics Express
Volume	7
Issue number	5
DOIs	https://doi.org/10.7567/APEX.7.051301
Publication status	Published - May 2014
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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abstract = "We demonstrate that Ge(100), (110), and (111) Ge surfaces are planarized with atomic level step and terrace structures in H2 annealing. The temperature required for such planarization is different among the three orientations. The step edge structure on the Ge(100) surface is composed of alternate smooth and rough steps (Sa + Sb steps) owing to the (2 × 1) reconstruction on that surface. It is also shown that the terrace widths on the Ge(110) and (111) surfaces are on average controlled by adjusting the off-angle from the respective surface orientation.",

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AU - Nishimura, Tomonori

AU - Kabuyanagi, Shoichi

AU - Zhang, Wenfeng

AU - Lee, Choong Hyun

AU - Yajima, Takeaki

AU - Nagashio, Kosuke

AU - Toriumi, Akira

PY - 2014/5

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AB - We demonstrate that Ge(100), (110), and (111) Ge surfaces are planarized with atomic level step and terrace structures in H2 annealing. The temperature required for such planarization is different among the three orientations. The step edge structure on the Ge(100) surface is composed of alternate smooth and rough steps (Sa + Sb steps) owing to the (2 × 1) reconstruction on that surface. It is also shown that the terrace widths on the Ge(110) and (111) surfaces are on average controlled by adjusting the off-angle from the respective surface orientation.

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