Atomistic observation of electron irradiation-induced defects in CeO 2

Seiya Takaki; Tomokazu Yamamoto; Masanori Kutsuwada; Kazuhiro Yasuda; Syo Matsumura

doi:10.1557/opl.2013.199

Atomistic observation of electron irradiation-induced defects in CeO ₂

Seiya Takaki, Tomokazu Yamamoto, Masanori Kutsuwada, Kazuhiro Yasuda, Syo Matsumura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We have investigated the atomistic structure of radiation-induced defects in CeCO2 formed under 200 keV electron irradiation. Dislocation loops on {111} habit planes are observed, and they grow accompanying strong strain-field. Atomic resolution scanning transmission electron microscopy (STEM) observations with high angle annular dark-field (HAADF) and annular bright-field (ABF) imaging techniques showed that no additional Ce layers are inserted at the position of the dislocation loop, and that strong distortion and expansion is induced around the dislocation loops. These results are discussed that dislocation loops formed under electron irradiation are non-stoichiometric defects consist of oxygen interstitials.

Original language	English
Title of host publication	Advances in Materials for Nuclear Energy
Pages	93-98
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2013.199
Publication status	Published - 2013
Event	2012 MRS Fall Meeting - Boston, MA, United States Duration: Nov 25 2012 → Nov 30 2012

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1514
ISSN (Print)	0272-9172

Other

Other	2012 MRS Fall Meeting
Country	United States
City	Boston, MA
Period	11/25/12 → 11/30/12

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Atomistic observation of electron irradiation-induced defects in CeO ₂. / Takaki, Seiya; Yamamoto, Tomokazu; Kutsuwada, Masanori; Yasuda, Kazuhiro ; Matsumura, Syo.

Advances in Materials for Nuclear Energy. 2013. p. 93-98 (Materials Research Society Symposium Proceedings; Vol. 1514).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - We have investigated the atomistic structure of radiation-induced defects in CeCO2 formed under 200 keV electron irradiation. Dislocation loops on {111} habit planes are observed, and they grow accompanying strong strain-field. Atomic resolution scanning transmission electron microscopy (STEM) observations with high angle annular dark-field (HAADF) and annular bright-field (ABF) imaging techniques showed that no additional Ce layers are inserted at the position of the dislocation loop, and that strong distortion and expansion is induced around the dislocation loops. These results are discussed that dislocation loops formed under electron irradiation are non-stoichiometric defects consist of oxygen interstitials.

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