Abstract
We have investigated the atomistic structure of radiation-induced defects in CeCO2 formed under 200 keV electron irradiation. Dislocation loops on {111} habit planes are observed, and they grow accompanying strong strain-field. Atomic resolution scanning transmission electron microscopy (STEM) observations with high angle annular dark-field (HAADF) and annular bright-field (ABF) imaging techniques showed that no additional Ce layers are inserted at the position of the dislocation loop, and that strong distortion and expansion is induced around the dislocation loops. These results are discussed that dislocation loops formed under electron irradiation are non-stoichiometric defects consist of oxygen interstitials.
| Original language | English |
|---|---|
| Title of host publication | Advances in Materials for Nuclear Energy |
| Pages | 93-98 |
| Number of pages | 6 |
| DOIs | |
| Publication status | Published - Nov 26 2013 |
| Event | 2012 MRS Fall Meeting - Boston, MA, United States Duration: Nov 25 2012 → Nov 30 2012 |
Publication series
| Name | Materials Research Society Symposium Proceedings |
|---|---|
| Volume | 1514 |
| ISSN (Print) | 0272-9172 |
Other
| Other | 2012 MRS Fall Meeting |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 11/25/12 → 11/30/12 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Cite this
Takaki, S., Yamamoto, T., Kutsuwada, M., Yasuda, K., & Matsumura, S. (2013). Atomistic observation of electron irradiation-induced defects in CeO 2. In Advances in Materials for Nuclear Energy (pp. 93-98). (Materials Research Society Symposium Proceedings; Vol. 1514). https://doi.org/10.1557/opl.2013.199