Au-catalyst induced low temperature (∼250 °C) layer exchange crystallization for SiGe on insulator

Jong Hyeok Park, Masashi Kurosawa, Naoyuki Kawabata, Masanobu Miyao, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The gold-induced crystallization technique has been investigated to achieve poly-SiGe films on insulators at low temperatures (≤ 300°C). By annealing of the amorphous SiGe (Ge concentration: 0-100%)/Au stacked structures formed on insulating substrates, positions of the SiGe and Au layers are inverted, and the Au/SiGe stacked structures are obtained. Crystallization of the SiGe layers in the inverted samples is confirmed by the Raman scattering spectroscopy analysis. Moreover, the Raman measurements reveal that the Ge fractions in the crystallized SiGe layers are almost the same as those of the initial amorphous SiGe layers. This gold-induced layer-exchange crystallization technique of SiGe layers at a low temperature (∼250°C) will be very useful to obtain poly-SiGe layers on plastic substrates, which are essential to realize flexible high-speed thin-films transistors and high-efficiency solar cells.

Original languageEnglish
Title of host publicationAdvanced Semiconductor-on-Insulator Technology and Related Physics 15
Pages39-42
Number of pages4
Edition5
DOIs
Publication statusPublished - Aug 2 2011
Event15th International Symposium on Advanced Semiconductor-on-Insulator Technology and Related Physics - 219th ECS Meeting - Montreal, QC, Canada
Duration: May 1 2011May 6 2011

Publication series

NameECS Transactions
Number5
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other15th International Symposium on Advanced Semiconductor-on-Insulator Technology and Related Physics - 219th ECS Meeting
Country/TerritoryCanada
CityMontreal, QC
Period5/1/115/6/11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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