TY - JOUR
T1 - Au-induced lateral crystallization of a-Si1-xGex (x: 0-1) at low temperature
AU - Aoki, Tomohisa
AU - Kanno, Hiroshi
AU - Kenjo, Atsushi
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
N1 - Funding Information:
A part of this work was supported by the Grant-in-Aid for Scientific Research of the Ministry of Education, Culture, Sports, Science and Technology of Japan.
PY - 2006/6/5
Y1 - 2006/6/5
N2 - Au-induced lateral crystallization of amorphous Si1-xGex (x: 0-1) on SiO2 at a low temperature (400 °C) has been investigated. Although the growth velocity decreased with increasing Ge fraction, growth velocity exceeding 20 μm/h was obtained for all Ge fractions. As a result, poly-Si1-xGex with large areas (> 20 μm) was obtained at a low temperature (400 °C). This is a great advantage of Au-induced lateral crystallization compared with Ni. However, the concentrations in the surface regions (depth: 0-20 nm) of the lateral growth regions were high (10-30%), though those in the deeper regions (depth: 20-50 nm) were as small as 1-2%. Removing of the surface regions with the high Au concentrations and gettering of Au atoms in the deeper regions are necessary to apply the grown layers to the device fabrication.
AB - Au-induced lateral crystallization of amorphous Si1-xGex (x: 0-1) on SiO2 at a low temperature (400 °C) has been investigated. Although the growth velocity decreased with increasing Ge fraction, growth velocity exceeding 20 μm/h was obtained for all Ge fractions. As a result, poly-Si1-xGex with large areas (> 20 μm) was obtained at a low temperature (400 °C). This is a great advantage of Au-induced lateral crystallization compared with Ni. However, the concentrations in the surface regions (depth: 0-20 nm) of the lateral growth regions were high (10-30%), though those in the deeper regions (depth: 20-50 nm) were as small as 1-2%. Removing of the surface regions with the high Au concentrations and gettering of Au atoms in the deeper regions are necessary to apply the grown layers to the device fabrication.
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U2 - 10.1016/j.tsf.2005.07.317
DO - 10.1016/j.tsf.2005.07.317
M3 - Article
AN - SCOPUS:33646086491
SN - 0040-6090
VL - 508
SP - 44
EP - 47
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1-2
ER -