Au-induced low-temperature (∼250°C) crystallization of Si on insulator through layer-exchange process

Jong Hyeok Park; Masashi Kurosawa; Naoyuki Kawabata; Masanobu Miyao; Taizoh Sadoh

doi:10.1149/1.3562275

Au-induced low-temperature (∼250°C) crystallization of Si on insulator through layer-exchange process

Jong Hyeok Park, Masashi Kurosawa, Naoyuki Kawabata, Masanobu Miyao, Taizoh Sadoh

Electronic Devices

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Abstract

Au-induced crystallization of Si through a layer-exchange process has been investigated to achieve poly-Si films on insulators at low-temperatures (∼250°C). By annealing (250-350°C) of amorphous Si (a-Si)/Au stacked structures formed on insulators, the positions of Si/Au layers are inverted, and Au/poly-Si stacked structures are obtained. This Au-induced layer-exchange growth technique at low-temperatures (∼250°C) should be very useful to obtain poly-Si films on flexible substrates, which are employed as template layers for growth of high quality Si_1-xGe_x (x: 0-1) films to realize flexible high-speed thin-film transistors and flexible high-efficiency solar cells.

Original language	English
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	6
DOIs	https://doi.org/10.1149/1.3562275
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

Electrochemistry
Electrical and Electronic Engineering
Materials Science(all)
Chemical Engineering(all)
Physical and Theoretical Chemistry

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abstract = "Au-induced crystallization of Si through a layer-exchange process has been investigated to achieve poly-Si films on insulators at low-temperatures (∼250°C). By annealing (250-350°C) of amorphous Si (a-Si)/Au stacked structures formed on insulators, the positions of Si/Au layers are inverted, and Au/poly-Si stacked structures are obtained. This Au-induced layer-exchange growth technique at low-temperatures (∼250°C) should be very useful to obtain poly-Si films on flexible substrates, which are employed as template layers for growth of high quality Si1-xGex (x: 0-1) films to realize flexible high-speed thin-film transistors and flexible high-efficiency solar cells.",

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AU - Park, Jong Hyeok

AU - Kurosawa, Masashi

AU - Kawabata, Naoyuki

AU - Miyao, Masanobu

AU - Sadoh, Taizoh

PY - 2011

Y1 - 2011

N2 - Au-induced crystallization of Si through a layer-exchange process has been investigated to achieve poly-Si films on insulators at low-temperatures (∼250°C). By annealing (250-350°C) of amorphous Si (a-Si)/Au stacked structures formed on insulators, the positions of Si/Au layers are inverted, and Au/poly-Si stacked structures are obtained. This Au-induced layer-exchange growth technique at low-temperatures (∼250°C) should be very useful to obtain poly-Si films on flexible substrates, which are employed as template layers for growth of high quality Si1-xGex (x: 0-1) films to realize flexible high-speed thin-film transistors and flexible high-efficiency solar cells.

AB - Au-induced crystallization of Si through a layer-exchange process has been investigated to achieve poly-Si films on insulators at low-temperatures (∼250°C). By annealing (250-350°C) of amorphous Si (a-Si)/Au stacked structures formed on insulators, the positions of Si/Au layers are inverted, and Au/poly-Si stacked structures are obtained. This Au-induced layer-exchange growth technique at low-temperatures (∼250°C) should be very useful to obtain poly-Si films on flexible substrates, which are employed as template layers for growth of high quality Si1-xGex (x: 0-1) films to realize flexible high-speed thin-film transistors and flexible high-efficiency solar cells.

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Au-induced low-temperature (∼250°C) crystallization of Si on insulator through layer-exchange process

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