Au-induced low-temperature (∼250°C) crystallization of Si on insulator through layer-exchange process

Jong Hyeok Park, Masashi Kurosawa, Naoyuki Kawabata, Masanobu Miyao, Taizoh Sadoh

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Au-induced crystallization of Si through a layer-exchange process has been investigated to achieve poly-Si films on insulators at low-temperatures (∼250°C). By annealing (250-350°C) of amorphous Si (a-Si)/Au stacked structures formed on insulators, the positions of Si/Au layers are inverted, and Au/poly-Si stacked structures are obtained. This Au-induced layer-exchange growth technique at low-temperatures (∼250°C) should be very useful to obtain poly-Si films on flexible substrates, which are employed as template layers for growth of high quality Si1-xGex (x: 0-1) films to realize flexible high-speed thin-film transistors and flexible high-efficiency solar cells.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume14
Issue number6
DOIs
Publication statusPublished - 2011

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Crystallization
Polysilicon
insulators
crystallization
Thin film transistors
Temperature
Solar cells
Annealing
transistors
templates
solar cells
high speed
Substrates
annealing
thin films

All Science Journal Classification (ASJC) codes

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

Cite this

Au-induced low-temperature (∼250°C) crystallization of Si on insulator through layer-exchange process. / Park, Jong Hyeok; Kurosawa, Masashi; Kawabata, Naoyuki; Miyao, Masanobu; Sadoh, Taizoh.

In: Electrochemical and Solid-State Letters, Vol. 14, No. 6, 2011.

Research output: Contribution to journalArticle

Park, Jong Hyeok ; Kurosawa, Masashi ; Kawabata, Naoyuki ; Miyao, Masanobu ; Sadoh, Taizoh. / Au-induced low-temperature (∼250°C) crystallization of Si on insulator through layer-exchange process. In: Electrochemical and Solid-State Letters. 2011 ; Vol. 14, No. 6.
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