AUTOMATIC THICKNESS MEASUREMENT OF A SINGLE Si CRYSTAL ISLAND SURROUNDED BY SiO//2 DIELECTRIC FILM AND POLYSILICON LAYER.

Renshi Sawada, Toshiroh Karaki, Junji Watanabe

Research output: Contribution to journalArticle

Abstract

A method and instrument for thickness measurement of a single Si crystal island in a compounded substrate consisting of a single Si crystal surrounded by SiO//2 dielectric film and polysilicon layer, the so-called dielectric insulation wafer, are described. The measuring instrument to which the Lichtschnitt method is applied, using an infrared slit beam, provided satisfactory accuracy within plus or minus 1. 5 mu m for the island thickness range from 10 to 400 mu m.

Original languageEnglish
Pages (from-to)293-298
Number of pages6
JournalBulletin of the Japan Society of Precision Engineering
Volume18
Issue number4
Publication statusPublished - Dec 1 1984

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Thickness measurement
Dielectric films
Polysilicon
Crystals
Insulation
Infrared radiation
Substrates

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

AUTOMATIC THICKNESS MEASUREMENT OF A SINGLE Si CRYSTAL ISLAND SURROUNDED BY SiO//2 DIELECTRIC FILM AND POLYSILICON LAYER. / Sawada, Renshi; Karaki, Toshiroh; Watanabe, Junji.

In: Bulletin of the Japan Society of Precision Engineering, Vol. 18, No. 4, 01.12.1984, p. 293-298.

Research output: Contribution to journalArticle

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