A method and instrument for thickness measurement of a single Si crystal island in a compounded substrate consisting of a single Si crystal surrounded by SiO//2 dielectric film and polysilicon layer, the so-called dielectric insulation wafer, are described. The measuring instrument to which the Lichtschnitt method is applied, using an infrared slit beam, provided satisfactory accuracy within plus or minus 1. 5 mu m for the island thickness range from 10 to 400 mu m.
|Number of pages||6|
|Journal||Bulletin of the Japan Society of Precision Engineering|
|Publication status||Published - Dec 1 1984|
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