Autostoichiometric vapor deposition III. A study of stoichiometry and characterization of epitaxial LiTaO3 layer

K. W. Chour, R. C. Zhang, M. S. Goorsky, T. Takada, E. Akiba, T. Kumagai, K. Kawaguchi, M. L. Jensen, C. Eaves, R. Xu

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Abstract

The effect of precursor vapor pressure on LiNbO3 and LiTaO3 film stoichiometry is compared for single and double alkoxides. Stoichiometric evaporation can be achieved in an appropriate temperature and pressure range according to the precursor sublimate composition analysis. The deposited LiTaO3 films from LiTa(1-OC4H9)6 were Stoichiometric and epitaxial when a lattice-matched single-crystal substrate was used. The stoichiometry of the film was assessed by Rutherford backscattering and precision lattice parameter measurements. The high quality of the epitaxial layer was confirmed by high-resolution double-and triple-axes X-ray diffraction.

Original languageEnglish
Pages (from-to)217-226
Number of pages10
JournalJournal of Crystal Growth
Volume183
Issue number1-2
DOIs
Publication statusPublished - Jan 1998

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Chour, K. W., Zhang, R. C., Goorsky, M. S., Takada, T., Akiba, E., Kumagai, T., ... Xu, R. (1998). Autostoichiometric vapor deposition III. A study of stoichiometry and characterization of epitaxial LiTaO3 layer. Journal of Crystal Growth, 183(1-2), 217-226. https://doi.org/10.1016/S0022-0248(97)00385-0