B- And P-doped Si0.8Ge0.2 thin film deposited by helicon sputtering for the micro-thermoelectric gas sensor

Kazuki Tajima, Woosuck Shin, Maiko Nishibori, Norimitsu Murayama, Toshio Itoh, Noriya Izu, Ichiro Matsubara

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Micro-thermoelectric hydrogen sensor (micro-THS) with the combination of the thermoelectric effect of Si0.8Ge0.2 thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation was prepared by microfabrication process. In the viewpoint of high sensitivity of micro-THS, the thermoelectric properties of the Si0.8Ge0.2 thin film could be improved by optimizing carrier concentration using helicon sputtering with an advantage of easy doping control, and sensitivity of the device with this thin film was investigated. As the result, the boron-doped Si 0.8Ge0.2 thin film is considered to be the better choice ensuring the reliable monitoring of hydrogen concentration down to ppm level.

Original languageEnglish
Pages (from-to)99-102
Number of pages4
JournalKey Engineering Materials
Volume320
DOIs
Publication statusPublished - Jan 1 2006
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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