TY - JOUR
T1 - B- And P-doped Si0.8Ge0.2 thin film deposited by helicon sputtering for the micro-thermoelectric gas sensor
AU - Tajima, Kazuki
AU - Shin, Woosuck
AU - Nishibori, Maiko
AU - Murayama, Norimitsu
AU - Itoh, Toshio
AU - Izu, Noriya
AU - Matsubara, Ichiro
PY - 2006
Y1 - 2006
N2 - Micro-thermoelectric hydrogen sensor (micro-THS) with the combination of the thermoelectric effect of Si0.8Ge0.2 thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation was prepared by microfabrication process. In the viewpoint of high sensitivity of micro-THS, the thermoelectric properties of the Si0.8Ge0.2 thin film could be improved by optimizing carrier concentration using helicon sputtering with an advantage of easy doping control, and sensitivity of the device with this thin film was investigated. As the result, the boron-doped Si 0.8Ge0.2 thin film is considered to be the better choice ensuring the reliable monitoring of hydrogen concentration down to ppm level.
AB - Micro-thermoelectric hydrogen sensor (micro-THS) with the combination of the thermoelectric effect of Si0.8Ge0.2 thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation was prepared by microfabrication process. In the viewpoint of high sensitivity of micro-THS, the thermoelectric properties of the Si0.8Ge0.2 thin film could be improved by optimizing carrier concentration using helicon sputtering with an advantage of easy doping control, and sensitivity of the device with this thin film was investigated. As the result, the boron-doped Si 0.8Ge0.2 thin film is considered to be the better choice ensuring the reliable monitoring of hydrogen concentration down to ppm level.
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U2 - 10.4028/0-87849-411-1.99
DO - 10.4028/0-87849-411-1.99
M3 - Article
AN - SCOPUS:33748453708
SN - 1013-9826
VL - 320
SP - 99
EP - 102
JO - Key Engineering Materials
JF - Key Engineering Materials
ER -