Band alignment of Ga2O3/Si heterojunction interface measured by X-ray photoelectron spectroscopy

Zhengwei Chen, Kazuo Nishihagi, Xu Wang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Makoto Arita, Qixin Guo

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34 Citations (Scopus)

Abstract

Ga2O3 thin films were deposited on (111) Si substrate by pulsed laser deposition method. X-ray photoelectron spectroscopy has been used to determine the valence band offset at Ga2O3/Si heterojunction interface. We measured the binding energies of Si 2p and Ga 2p3/2 core levels and the valence band maxima energies. The valence band offset is determined to be 3.5 ± 0.1 eV. As a consequence a type heterojunction with a conduction band offset of 0.2 ± 0.1 eV is found. The determination of the band alignment of Ga2O3/Si heterojunction facilitates the design of optical and electronic devices based on the Ga2O3/Si structure.

Original languageEnglish
Article number102106
JournalApplied Physics Letters
Volume109
Issue number10
DOIs
Publication statusPublished - Sep 5 2016

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Chen, Z., Nishihagi, K., Wang, X., Saito, K., Tanaka, T., Nishio, M., Arita, M., & Guo, Q. (2016). Band alignment of Ga2O3/Si heterojunction interface measured by X-ray photoelectron spectroscopy. Applied Physics Letters, 109(10), [102106]. https://doi.org/10.1063/1.4962538