Band alignment of Ga2O3/Si heterojunction interface measured by X-ray photoelectron spectroscopy

Zhengwei Chen, Kazuo Nishihagi, Xu Wang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Makoto Arita, Qixin Guo

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Ga2O3 thin films were deposited on (111) Si substrate by pulsed laser deposition method. X-ray photoelectron spectroscopy has been used to determine the valence band offset at Ga2O3/Si heterojunction interface. We measured the binding energies of Si 2p and Ga 2p3/2 core levels and the valence band maxima energies. The valence band offset is determined to be 3.5 ± 0.1 eV. As a consequence a type heterojunction with a conduction band offset of 0.2 ± 0.1 eV is found. The determination of the band alignment of Ga2O3/Si heterojunction facilitates the design of optical and electronic devices based on the Ga2O3/Si structure.

Original languageEnglish
Article number102106
JournalApplied Physics Letters
Volume109
Issue number10
DOIs
Publication statusPublished - Sep 5 2016

Fingerprint

heterojunctions
alignment
photoelectron spectroscopy
valence
x rays
pulsed laser deposition
conduction bands
binding energy
thin films
electronics
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chen, Z., Nishihagi, K., Wang, X., Saito, K., Tanaka, T., Nishio, M., ... Guo, Q. (2016). Band alignment of Ga2O3/Si heterojunction interface measured by X-ray photoelectron spectroscopy. Applied Physics Letters, 109(10), [102106]. https://doi.org/10.1063/1.4962538

Band alignment of Ga2O3/Si heterojunction interface measured by X-ray photoelectron spectroscopy. / Chen, Zhengwei; Nishihagi, Kazuo; Wang, Xu; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Arita, Makoto; Guo, Qixin.

In: Applied Physics Letters, Vol. 109, No. 10, 102106, 05.09.2016.

Research output: Contribution to journalArticle

Chen, Z, Nishihagi, K, Wang, X, Saito, K, Tanaka, T, Nishio, M, Arita, M & Guo, Q 2016, 'Band alignment of Ga2O3/Si heterojunction interface measured by X-ray photoelectron spectroscopy', Applied Physics Letters, vol. 109, no. 10, 102106. https://doi.org/10.1063/1.4962538
Chen, Zhengwei ; Nishihagi, Kazuo ; Wang, Xu ; Saito, Katsuhiko ; Tanaka, Tooru ; Nishio, Mitsuhiro ; Arita, Makoto ; Guo, Qixin. / Band alignment of Ga2O3/Si heterojunction interface measured by X-ray photoelectron spectroscopy. In: Applied Physics Letters. 2016 ; Vol. 109, No. 10.
@article{a7f56b0ae4614560ac470a94e0d02e0f,
title = "Band alignment of Ga2O3/Si heterojunction interface measured by X-ray photoelectron spectroscopy",
abstract = "Ga2O3 thin films were deposited on (111) Si substrate by pulsed laser deposition method. X-ray photoelectron spectroscopy has been used to determine the valence band offset at Ga2O3/Si heterojunction interface. We measured the binding energies of Si 2p and Ga 2p3/2 core levels and the valence band maxima energies. The valence band offset is determined to be 3.5 ± 0.1 eV. As a consequence a type heterojunction with a conduction band offset of 0.2 ± 0.1 eV is found. The determination of the band alignment of Ga2O3/Si heterojunction facilitates the design of optical and electronic devices based on the Ga2O3/Si structure.",
author = "Zhengwei Chen and Kazuo Nishihagi and Xu Wang and Katsuhiko Saito and Tooru Tanaka and Mitsuhiro Nishio and Makoto Arita and Qixin Guo",
year = "2016",
month = "9",
day = "5",
doi = "10.1063/1.4962538",
language = "English",
volume = "109",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - Band alignment of Ga2O3/Si heterojunction interface measured by X-ray photoelectron spectroscopy

AU - Chen, Zhengwei

AU - Nishihagi, Kazuo

AU - Wang, Xu

AU - Saito, Katsuhiko

AU - Tanaka, Tooru

AU - Nishio, Mitsuhiro

AU - Arita, Makoto

AU - Guo, Qixin

PY - 2016/9/5

Y1 - 2016/9/5

N2 - Ga2O3 thin films were deposited on (111) Si substrate by pulsed laser deposition method. X-ray photoelectron spectroscopy has been used to determine the valence band offset at Ga2O3/Si heterojunction interface. We measured the binding energies of Si 2p and Ga 2p3/2 core levels and the valence band maxima energies. The valence band offset is determined to be 3.5 ± 0.1 eV. As a consequence a type heterojunction with a conduction band offset of 0.2 ± 0.1 eV is found. The determination of the band alignment of Ga2O3/Si heterojunction facilitates the design of optical and electronic devices based on the Ga2O3/Si structure.

AB - Ga2O3 thin films were deposited on (111) Si substrate by pulsed laser deposition method. X-ray photoelectron spectroscopy has been used to determine the valence band offset at Ga2O3/Si heterojunction interface. We measured the binding energies of Si 2p and Ga 2p3/2 core levels and the valence band maxima energies. The valence band offset is determined to be 3.5 ± 0.1 eV. As a consequence a type heterojunction with a conduction band offset of 0.2 ± 0.1 eV is found. The determination of the band alignment of Ga2O3/Si heterojunction facilitates the design of optical and electronic devices based on the Ga2O3/Si structure.

UR - http://www.scopus.com/inward/record.url?scp=84987654866&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84987654866&partnerID=8YFLogxK

U2 - 10.1063/1.4962538

DO - 10.1063/1.4962538

M3 - Article

AN - SCOPUS:84987654866

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 102106

ER -