Band gap tuning in InxGa1-xN/InyGa1-yN short period superlattices

I. Gorczyca, G. Staszczak, G. Targowski, E. Grzanka, J. Smalc-Koziorowska, T. Suski, T. Kawamura, Y. Kangawa

Research output: Contribution to journalArticlepeer-review

Abstract

To overcome the technological problem of the low In incorporation in InGaN based heterostructures we consider superlattices of the type: InxGa1-xN/InyGa1-yN (x > y). It is shown that the structures of the proposed type allow for a more precise tuning of the emission energy and shift of the light emission to lower energies by about 400 meV (50–60 nm) compared to the conventional InxGa1-xN/GaN SLs with the same concentration x. The above conclusions were drawn on the basis of comparing the calculated ab-initio band gaps with the photoluminescence emission energies obtained from the measurements performed on the specially designed samples grown by metal-organic vapor phase epitaxy.

Original languageEnglish
Article number106907
JournalSuperlattices and Microstructures
Volume155
DOIs
Publication statusPublished - Jul 2021

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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