Band transitions in wurtzite GaN and InN determined by valence electron energy loss spectroscopy

P. Specht, J. C. Ho, X. Xu, R. Armitage, E. R. Weber, R. Erni, C. Kisielowski

Research output: Contribution to journalArticlepeer-review

Abstract

Valence electron energy loss spectroscopy (VEELS) was applied to determine band transitions in wurtzite InN, deposited by molecular beam epitaxy on (0001) sapphire substrates or GaN buffer layers. The GaN buffer layer was used as VEELS reference. At room temperature a band transition for wurtzite InN was found at (1.7±0.2 eV) and for wurtzite GaN at (3.3±0.2 eV) that are ascribed to the fundamental bandgap. Additional band transitions could be identified at higher and lower energy losses. The latter may be related to transitions involving defect bands. In InN, neither oxygen related crystal phases nor indium metal clusters were observed in the areas of the epilayers investigated by VEELS. Consequently, the obtained results mainly describe the properties of the InN host crystal.

Original languageEnglish
Pages (from-to)340-344
Number of pages5
JournalSolid State Communications
Volume135
Issue number5
DOIs
Publication statusPublished - Aug 2005
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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