TY - JOUR
T1 - Band transitions in wurtzite GaN and InN determined by valence electron energy loss spectroscopy
AU - Specht, P.
AU - Ho, J. C.
AU - Xu, X.
AU - Armitage, R.
AU - Weber, E. R.
AU - Erni, R.
AU - Kisielowski, C.
N1 - Funding Information:
This work was financially supported by the Air Force Office of Scientific Research under contract no. FA9550-04-1-0408 and by the Director, Office of Science, Office of Basic Energy Sciences, of the US Department of Energy under contract no. DE-AC03-76SF00098. One of the authors (R.E.) was supported by the US Department of Energy under grant no. DE-FG02-03ER46057.
PY - 2005/8
Y1 - 2005/8
N2 - Valence electron energy loss spectroscopy (VEELS) was applied to determine band transitions in wurtzite InN, deposited by molecular beam epitaxy on (0001) sapphire substrates or GaN buffer layers. The GaN buffer layer was used as VEELS reference. At room temperature a band transition for wurtzite InN was found at (1.7±0.2 eV) and for wurtzite GaN at (3.3±0.2 eV) that are ascribed to the fundamental bandgap. Additional band transitions could be identified at higher and lower energy losses. The latter may be related to transitions involving defect bands. In InN, neither oxygen related crystal phases nor indium metal clusters were observed in the areas of the epilayers investigated by VEELS. Consequently, the obtained results mainly describe the properties of the InN host crystal.
AB - Valence electron energy loss spectroscopy (VEELS) was applied to determine band transitions in wurtzite InN, deposited by molecular beam epitaxy on (0001) sapphire substrates or GaN buffer layers. The GaN buffer layer was used as VEELS reference. At room temperature a band transition for wurtzite InN was found at (1.7±0.2 eV) and for wurtzite GaN at (3.3±0.2 eV) that are ascribed to the fundamental bandgap. Additional band transitions could be identified at higher and lower energy losses. The latter may be related to transitions involving defect bands. In InN, neither oxygen related crystal phases nor indium metal clusters were observed in the areas of the epilayers investigated by VEELS. Consequently, the obtained results mainly describe the properties of the InN host crystal.
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U2 - 10.1016/j.ssc.2005.04.041
DO - 10.1016/j.ssc.2005.04.041
M3 - Article
AN - SCOPUS:21244472007
VL - 135
SP - 340
EP - 344
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 5
ER -