Bandgap modulation in photoexcited topological insulator Bi2Te3 via atomic displacements

Masaki Hada, Katsura Norimatsu, Sei′ichi Tanaka, Sercan Keskin, Tetsuya Tsuruta, Kyushiro Igarashi, Tadahiko Ishikawa, Yosuke Kayanuma, R. J.Dwayne Miller, Ken Onda, Takao Sasagawa, Shin Ya Koshihara, Kazutaka G. Nakamura

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The atomic and electronic dynamics in the topological insulator (TI) Bi2Te3 under strong photoexcitation were characterized with time-resolved electron diffraction and time-resolved mid-infrared spectroscopy. Three-dimensional TIs characterized as bulk insulators with an electronic conduction surface band have shown a variety of exotic responses in terms of electronic transport when observed under conditions of applied pressure, magnetic field, or circularly polarized light. However, the atomic motions and their correlation between electronic systems in TIs under strong photoexcitation have not been explored. The artificial and transient modification of the electronic structures in TIs via photoinduced atomic motions represents a novel mechanism for providing a comparable level of bandgap control. The results of time-domain crystallography indicate that photoexcitation induces two-step atomic motions: first bismuth and then tellurium center-symmetric displacements. These atomic motions in Bi2Te3 trigger 10% bulk bandgap narrowing, which is consistent with the time-resolved mid-infrared spectroscopy results.

Original languageEnglish
Article number024504
JournalJournal of Chemical Physics
Volume145
Issue number2
DOIs
Publication statusPublished - Jul 14 2016

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Photoexcitation
Energy gap
photoexcitation
Modulation
insulators
modulation
Infrared spectroscopy
electronics
Tellurium
Bismuth
Crystallography
infrared spectroscopy
Light polarization
Electron diffraction
Electronic structure
tellurium
polarized light
bismuth
Magnetic fields
crystallography

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Hada, M., Norimatsu, K., Tanaka, S., Keskin, S., Tsuruta, T., Igarashi, K., ... Nakamura, K. G. (2016). Bandgap modulation in photoexcited topological insulator Bi2Te3 via atomic displacements. Journal of Chemical Physics, 145(2), [024504]. https://doi.org/10.1063/1.4955188

Bandgap modulation in photoexcited topological insulator Bi2Te3 via atomic displacements. / Hada, Masaki; Norimatsu, Katsura; Tanaka, Sei′ichi; Keskin, Sercan; Tsuruta, Tetsuya; Igarashi, Kyushiro; Ishikawa, Tadahiko; Kayanuma, Yosuke; Miller, R. J.Dwayne; Onda, Ken; Sasagawa, Takao; Koshihara, Shin Ya; Nakamura, Kazutaka G.

In: Journal of Chemical Physics, Vol. 145, No. 2, 024504, 14.07.2016.

Research output: Contribution to journalArticle

Hada, M, Norimatsu, K, Tanaka, S, Keskin, S, Tsuruta, T, Igarashi, K, Ishikawa, T, Kayanuma, Y, Miller, RJD, Onda, K, Sasagawa, T, Koshihara, SY & Nakamura, KG 2016, 'Bandgap modulation in photoexcited topological insulator Bi2Te3 via atomic displacements', Journal of Chemical Physics, vol. 145, no. 2, 024504. https://doi.org/10.1063/1.4955188
Hada M, Norimatsu K, Tanaka S, Keskin S, Tsuruta T, Igarashi K et al. Bandgap modulation in photoexcited topological insulator Bi2Te3 via atomic displacements. Journal of Chemical Physics. 2016 Jul 14;145(2). 024504. https://doi.org/10.1063/1.4955188
Hada, Masaki ; Norimatsu, Katsura ; Tanaka, Sei′ichi ; Keskin, Sercan ; Tsuruta, Tetsuya ; Igarashi, Kyushiro ; Ishikawa, Tadahiko ; Kayanuma, Yosuke ; Miller, R. J.Dwayne ; Onda, Ken ; Sasagawa, Takao ; Koshihara, Shin Ya ; Nakamura, Kazutaka G. / Bandgap modulation in photoexcited topological insulator Bi2Te3 via atomic displacements. In: Journal of Chemical Physics. 2016 ; Vol. 145, No. 2.
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