TY - GEN
T1 - Basic characteristics of a simultaneous double-side CMP machine, housed in a sealed, pressure-resistance container
AU - Kitamura, Kei
AU - Doi, Toshiro
AU - Kurokawa, Syuhei
AU - Umezaki, Yoji
AU - Matsukawa, Yoji
AU - Ooki, Yota
AU - Hasegawa, Tadashi
AU - Koshiyama, Isamu
AU - Ichikawa, Koichiro
AU - Nakamura, Yoshio
PY - 2010/12/29
Y1 - 2010/12/29
N2 - We designed and manufactured a prototype of a unique CMP machine, which can perform double-side CMP simultaneously in a sealed and pressure container as regarding effective action of the processing atmosphere around workpieces as important. Polishing experiments with single crystal silicon (Si) wafers (100) are performed by charging the container with various gases. As a result, the removal rates increased by up to 25% under high pressure oxygen gas atmosphere.
AB - We designed and manufactured a prototype of a unique CMP machine, which can perform double-side CMP simultaneously in a sealed and pressure container as regarding effective action of the processing atmosphere around workpieces as important. Polishing experiments with single crystal silicon (Si) wafers (100) are performed by charging the container with various gases. As a result, the removal rates increased by up to 25% under high pressure oxygen gas atmosphere.
UR - http://www.scopus.com/inward/record.url?scp=78650437220&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78650437220&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/KEM.447-448.61
DO - 10.4028/www.scientific.net/KEM.447-448.61
M3 - Conference contribution
AN - SCOPUS:78650437220
SN - 9780878492565
T3 - Key Engineering Materials
SP - 61
EP - 65
BT - Advances in Precision Engineering
T2 - ICoPE2010 and 13th ICPE International Conference on Precision Engineering
Y2 - 28 July 2010 through 30 July 2010
ER -