Basic study on etching selectivity of plasma chemical vaporization machining by introducing crystallographic damage into work surface

Yasuhisa Sano, Toshiro Doi, Syuhei Kurokawa, Hideo Aida, Osamu Ohnishi, Michio Uneda, Yuu Okada, Hiroaki Nishikawa, Kazuto Yamauchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Plasma chemical vaporization machining (PCVM) is a high-speed plasma etching method using atmospheric-pressure plasma. Although it does not leave an affected layer on the processed surface because of the small ion energy owing to the small mean free path of gas molecules, it is not suitable for planarization because of its isotropic etching. Thus, a combination of PCVM and a mechanical machining process is proposed. The convex parts of a substrate surface are considered to be affected by mechanical machining and are removed preferentially by PCVM. In this report, it is investigated whether etching rate of the affected layer becomes larger or not. As a result, it was found that the etching rate increased in the first 100 nm depth of the mechanically polished substrate, which corresponds to the thickness of the heavily damaged layer observed by cross-sectional transmission electron microscopy.

Original languageEnglish
Title of host publicationPrecision Engineering and Nanotechnology V
PublisherTrans Tech Publications Ltd
Pages550-553
Number of pages4
ISBN (Print)9783038352112
DOIs
Publication statusPublished - Jan 1 2015
Event5th International Conference on Asian Society for Precision Engineering and Nanotechnology, ASPEN 2013 - Taipei, Taiwan, Province of China
Duration: Nov 12 2013Nov 15 2013

Publication series

NameKey Engineering Materials
Volume625
ISSN (Print)1013-9826

Other

Other5th International Conference on Asian Society for Precision Engineering and Nanotechnology, ASPEN 2013
CountryTaiwan, Province of China
CityTaipei
Period11/12/1311/15/13

Fingerprint

Vaporization
Etching
Machining
Plasmas
Plasma etching
Substrates
Atmospheric pressure
Gases
Ions
Transmission electron microscopy
Molecules

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Sano, Y., Doi, T., Kurokawa, S., Aida, H., Ohnishi, O., Uneda, M., ... Yamauchi, K. (2015). Basic study on etching selectivity of plasma chemical vaporization machining by introducing crystallographic damage into work surface. In Precision Engineering and Nanotechnology V (pp. 550-553). (Key Engineering Materials; Vol. 625). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/KEM.625.550

Basic study on etching selectivity of plasma chemical vaporization machining by introducing crystallographic damage into work surface. / Sano, Yasuhisa; Doi, Toshiro; Kurokawa, Syuhei; Aida, Hideo; Ohnishi, Osamu; Uneda, Michio; Okada, Yuu; Nishikawa, Hiroaki; Yamauchi, Kazuto.

Precision Engineering and Nanotechnology V. Trans Tech Publications Ltd, 2015. p. 550-553 (Key Engineering Materials; Vol. 625).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sano, Y, Doi, T, Kurokawa, S, Aida, H, Ohnishi, O, Uneda, M, Okada, Y, Nishikawa, H & Yamauchi, K 2015, Basic study on etching selectivity of plasma chemical vaporization machining by introducing crystallographic damage into work surface. in Precision Engineering and Nanotechnology V. Key Engineering Materials, vol. 625, Trans Tech Publications Ltd, pp. 550-553, 5th International Conference on Asian Society for Precision Engineering and Nanotechnology, ASPEN 2013, Taipei, Taiwan, Province of China, 11/12/13. https://doi.org/10.4028/www.scientific.net/KEM.625.550
Sano Y, Doi T, Kurokawa S, Aida H, Ohnishi O, Uneda M et al. Basic study on etching selectivity of plasma chemical vaporization machining by introducing crystallographic damage into work surface. In Precision Engineering and Nanotechnology V. Trans Tech Publications Ltd. 2015. p. 550-553. (Key Engineering Materials). https://doi.org/10.4028/www.scientific.net/KEM.625.550
Sano, Yasuhisa ; Doi, Toshiro ; Kurokawa, Syuhei ; Aida, Hideo ; Ohnishi, Osamu ; Uneda, Michio ; Okada, Yuu ; Nishikawa, Hiroaki ; Yamauchi, Kazuto. / Basic study on etching selectivity of plasma chemical vaporization machining by introducing crystallographic damage into work surface. Precision Engineering and Nanotechnology V. Trans Tech Publications Ltd, 2015. pp. 550-553 (Key Engineering Materials).
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