Behavior and role of superficial oxygen in Cu for the growth of large single-crystalline graphene

Dong Ding, Pablo Solís-Fernández, Rozan Mohamad Yunus, Hiroki Hibino, Hiroki Ago

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Decreasing the nucleation density of graphene grown on copper (Cu) foil by chemical vapor deposition (CVD) is essential for the synthesis of large-area single-crystalline graphene. Here, the behavior of the copper oxide layer and its impact on the graphene growth have been investigated. We found that a small amount of oxygen dissolves into the Cu when the oxide layer decomposes during the heating up in a non-reducing Ar environment. The remaining oxygen in the Cu foil can play an important role in decreasing the graphene nucleation density. The dissolved oxygen can withstand at high temperatures even in reducing H 2 environments without completely losing its effectiveness for maintaining a low graphene nucleation density. However, heating up in a H 2 environment significantly reduces the copper oxide layer during the very first moments of the process at low temperatures, preventing the oxygen to dissolve into the Cu and significantly increasing the nucleation density. These findings will help to improve the graphene growth on Cu catalyst by increasing the grain size while decreasing the grain density.

Original languageEnglish
Pages (from-to)142-149
Number of pages8
JournalApplied Surface Science
Volume408
DOIs
Publication statusPublished - Jun 30 2017

Fingerprint

Graphite
Graphene
Oxygen
Crystalline materials
Nucleation
Copper oxides
Metal foil
Heating
Dissolved oxygen
Oxides
Copper
Chemical vapor deposition
Temperature
Catalysts

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Behavior and role of superficial oxygen in Cu for the growth of large single-crystalline graphene. / Ding, Dong; Solís-Fernández, Pablo; Yunus, Rozan Mohamad; Hibino, Hiroki; Ago, Hiroki.

In: Applied Surface Science, Vol. 408, 30.06.2017, p. 142-149.

Research output: Contribution to journalArticle

Ding, Dong ; Solís-Fernández, Pablo ; Yunus, Rozan Mohamad ; Hibino, Hiroki ; Ago, Hiroki. / Behavior and role of superficial oxygen in Cu for the growth of large single-crystalline graphene. In: Applied Surface Science. 2017 ; Vol. 408. pp. 142-149.
@article{d7dffa13d2dd4989a63aab72d1162ff3,
title = "Behavior and role of superficial oxygen in Cu for the growth of large single-crystalline graphene",
abstract = "Decreasing the nucleation density of graphene grown on copper (Cu) foil by chemical vapor deposition (CVD) is essential for the synthesis of large-area single-crystalline graphene. Here, the behavior of the copper oxide layer and its impact on the graphene growth have been investigated. We found that a small amount of oxygen dissolves into the Cu when the oxide layer decomposes during the heating up in a non-reducing Ar environment. The remaining oxygen in the Cu foil can play an important role in decreasing the graphene nucleation density. The dissolved oxygen can withstand at high temperatures even in reducing H 2 environments without completely losing its effectiveness for maintaining a low graphene nucleation density. However, heating up in a H 2 environment significantly reduces the copper oxide layer during the very first moments of the process at low temperatures, preventing the oxygen to dissolve into the Cu and significantly increasing the nucleation density. These findings will help to improve the graphene growth on Cu catalyst by increasing the grain size while decreasing the grain density.",
author = "Dong Ding and Pablo Sol{\'i}s-Fern{\'a}ndez and Yunus, {Rozan Mohamad} and Hiroki Hibino and Hiroki Ago",
year = "2017",
month = "6",
day = "30",
doi = "10.1016/j.apsusc.2017.02.250",
language = "English",
volume = "408",
pages = "142--149",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

TY - JOUR

T1 - Behavior and role of superficial oxygen in Cu for the growth of large single-crystalline graphene

AU - Ding, Dong

AU - Solís-Fernández, Pablo

AU - Yunus, Rozan Mohamad

AU - Hibino, Hiroki

AU - Ago, Hiroki

PY - 2017/6/30

Y1 - 2017/6/30

N2 - Decreasing the nucleation density of graphene grown on copper (Cu) foil by chemical vapor deposition (CVD) is essential for the synthesis of large-area single-crystalline graphene. Here, the behavior of the copper oxide layer and its impact on the graphene growth have been investigated. We found that a small amount of oxygen dissolves into the Cu when the oxide layer decomposes during the heating up in a non-reducing Ar environment. The remaining oxygen in the Cu foil can play an important role in decreasing the graphene nucleation density. The dissolved oxygen can withstand at high temperatures even in reducing H 2 environments without completely losing its effectiveness for maintaining a low graphene nucleation density. However, heating up in a H 2 environment significantly reduces the copper oxide layer during the very first moments of the process at low temperatures, preventing the oxygen to dissolve into the Cu and significantly increasing the nucleation density. These findings will help to improve the graphene growth on Cu catalyst by increasing the grain size while decreasing the grain density.

AB - Decreasing the nucleation density of graphene grown on copper (Cu) foil by chemical vapor deposition (CVD) is essential for the synthesis of large-area single-crystalline graphene. Here, the behavior of the copper oxide layer and its impact on the graphene growth have been investigated. We found that a small amount of oxygen dissolves into the Cu when the oxide layer decomposes during the heating up in a non-reducing Ar environment. The remaining oxygen in the Cu foil can play an important role in decreasing the graphene nucleation density. The dissolved oxygen can withstand at high temperatures even in reducing H 2 environments without completely losing its effectiveness for maintaining a low graphene nucleation density. However, heating up in a H 2 environment significantly reduces the copper oxide layer during the very first moments of the process at low temperatures, preventing the oxygen to dissolve into the Cu and significantly increasing the nucleation density. These findings will help to improve the graphene growth on Cu catalyst by increasing the grain size while decreasing the grain density.

UR - http://www.scopus.com/inward/record.url?scp=85014942872&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85014942872&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2017.02.250

DO - 10.1016/j.apsusc.2017.02.250

M3 - Article

AN - SCOPUS:85014942872

VL - 408

SP - 142

EP - 149

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -