Behavior of defects induced by low-energy ions in silicon films

Taizoh Sadoh, Hironori Takeshita, Akiyoshi Baba, Atsushi Kenjo, Hiroshi Nakashima, Toshio Tsurusiiima

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Abstract

Behavior of defects induced by low-energy (5 keV at maximum) argon ions or protons in 600 nm thin silicon crystals has been investigated. A significant amount of defects diffuse from the damaged surface layers to the deeper regions even at room temperature, and act as the carrier traps and the scattering center that affect the electrical properties of the films. Most of the defects disappaer after annealing at 300°C. Electrical and thermal properties of the defects depend on the creation rate of Frenkel pairs.

Original languageEnglish
Pages (from-to)715
Number of pages1
JournalJapanese Journal of Applied Physics
Volume33
Issue number12S
DOIs
Publication statusPublished - Dec 1994

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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