Bending gettering of Si crystalline defects

R. Sawada, T. Karaki, J. Watanabe

Research output: Contribution to journalArticle

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Abstract

Suppression of oxidation-induced stacking faults in a Si wafer, to which bending stress was applied during thermal oxidation, was investigated. Straight dislocations were formed only in the neutral plane of the wafer and were absent at the surfaces where bending stress is greatest. The dislocations were introduced by application of lower bending stress, for a wafer with a great amount of SiO2 precipitates in bulk, and continued to function as sinks for oxidation-induced stacking fault nucleation sites, not only during the first oxidation but also through all subsequent high-temperature treatments. An origin of the dislocations was found based on the SiO2 precipitates in Si bulk. Gettering through bending is described together with the dislocation formation mechanism.

Original languageEnglish
Pages (from-to)6983-6988
Number of pages6
JournalJournal of Applied Physics
Volume53
Issue number10
DOIs
Publication statusPublished - Dec 1 1982

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Sawada, R., Karaki, T., & Watanabe, J. (1982). Bending gettering of Si crystalline defects. Journal of Applied Physics, 53(10), 6983-6988. https://doi.org/10.1063/1.330044