TY - JOUR
T1 - Benefits of flat polymer dielectric surface loading organic semiconductors in field-effect transistors prepared by electrode-peeling transfer
AU - Yasuda, Takeshi
AU - Fujita, Katsuhiko
AU - Nakashima, Hiroshi
AU - Tsutsui, Tetsuo
PY - 2003/8/1
Y1 - 2003/8/1
N2 - We have developed a method of fabrication for a flexible organic field-effect transistor (OFET), the electrode-peeling transfer. One of the advantageous features of this method is the remarkably flat surface of the prepared polymer dielectric layer. We fabricated various bottom contact OFETs to investigate the correlation of the device structure with the OFET characteristics. Device A was prepared on the flexible substrate by the electrode-peeling transfer. Device B was fabricated on a glass substrate with the same but as-deposited rough polymer insulator film. Device A exhibited a better performance with various organic semiconductors than Device B.
AB - We have developed a method of fabrication for a flexible organic field-effect transistor (OFET), the electrode-peeling transfer. One of the advantageous features of this method is the remarkably flat surface of the prepared polymer dielectric layer. We fabricated various bottom contact OFETs to investigate the correlation of the device structure with the OFET characteristics. Device A was prepared on the flexible substrate by the electrode-peeling transfer. Device B was fabricated on a glass substrate with the same but as-deposited rough polymer insulator film. Device A exhibited a better performance with various organic semiconductors than Device B.
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U2 - 10.1143/jjap.42.l967
DO - 10.1143/jjap.42.l967
M3 - Letter
AN - SCOPUS:0141792388
SN - 0021-4922
VL - 42
SP - L967-L969
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
IS - 8 A
ER -