Abstract
Structural properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering/channeling, and Raman spectroscopy. Strong redistribution of beryllium has been found after a post-implantation anneal step at temperatures between 1300 °C and 1700 °C. The use of a pre-anneal process at 1000 °C before the high-temperature treatment as well as graphite as a surface encapsulant do not efficiently suppress redistribution of Be in the SiC lattice. The crystalline state of the implanted and annealed material is well recovered after annealing at temperatures above 1400 °C.
| Original language | English |
|---|---|
| Journal | Materials Science Forum |
| Volume | 338 |
| Publication status | Published - Jan 1 2000 |
| Externally published | Yes |
| Event | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: Oct 10 1999 → Oct 15 1999 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Henkel, T., Tanaka, Y., Kobayashi, N., Nishizawa, S., & Hishita, S. (2000). Beryllium implantation doping of silicon carbide. Materials Science Forum, 338.