Abstract
Photo-lithography is a key technology for volume manufacture of high performance and compact semiconductor devices. Smaller and more complex structures can be fabricated by using shorter wavelength light in the photolithography. One of the most critical issues in development of the next generation photo-lithography is to increase energy conversion efficiency (CE) from laser to shorter wavelength light. Experimental database of beyond extreme ultraviolet (BEUV) radiation was obtained by using spherically symmetrical high-Z plasmas generated with spherically allocated laser beams. Absolute energy and spectra of BEUV light emitted from Tb, Gd, and Mo plasmas were measured with a absolutely calibrated BEUV calorimeter and a transmission grating spectrometer. 1.0 x 10 12 W/cm 2 is the optimal laser intensity to produced efficient BEUV light source plasmas with Tb and Gd targets. Maximum CE is achieved at 0.8% that is two times higher than the published CEs obtained with planar targets.
| Original language | English |
|---|---|
| Article number | 012046 |
| Journal | Journal of Physics: Conference Series |
| Volume | 688 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Apr 1 2016 |
| Event | 8th International Conference on Inertial Fusion Sciences and Applications, IFSA 2013 - Nara, Japan Duration: Sep 8 2013 → Sep 13 2013 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
Beyond Extreme Ultra Violet (BEUV) Radiation from Spherically symmetrical High-Z plasmas. / Yoshida, Kensuke; Fujioka, Shinsuke; Higashiguchi, Takeshi; Ugomori, Teruyuki; Tanaka, Nozomi; Kawasaki, Masato; Suzuki, Yuhei; Suzuki, Chihiro; Tomita, Kentaro; Hirose, Ryouichi; Eshima, Takeo; Ohashi, Hayato; Nishikino, Masaharu; Scally, Enda; Nshimura, Hiroaki; Azechi, Hiroshi; O'Sullivan, Gerard.
In: Journal of Physics: Conference Series, Vol. 688, No. 1, 012046, 01.04.2016.Research output: Contribution to journal › Conference article
}
TY - JOUR
T1 - Beyond Extreme Ultra Violet (BEUV) Radiation from Spherically symmetrical High-Z plasmas
AU - Yoshida, Kensuke
AU - Fujioka, Shinsuke
AU - Higashiguchi, Takeshi
AU - Ugomori, Teruyuki
AU - Tanaka, Nozomi
AU - Kawasaki, Masato
AU - Suzuki, Yuhei
AU - Suzuki, Chihiro
AU - Tomita, Kentaro
AU - Hirose, Ryouichi
AU - Eshima, Takeo
AU - Ohashi, Hayato
AU - Nishikino, Masaharu
AU - Scally, Enda
AU - Nshimura, Hiroaki
AU - Azechi, Hiroshi
AU - O'Sullivan, Gerard
PY - 2016/4/1
Y1 - 2016/4/1
N2 - Photo-lithography is a key technology for volume manufacture of high performance and compact semiconductor devices. Smaller and more complex structures can be fabricated by using shorter wavelength light in the photolithography. One of the most critical issues in development of the next generation photo-lithography is to increase energy conversion efficiency (CE) from laser to shorter wavelength light. Experimental database of beyond extreme ultraviolet (BEUV) radiation was obtained by using spherically symmetrical high-Z plasmas generated with spherically allocated laser beams. Absolute energy and spectra of BEUV light emitted from Tb, Gd, and Mo plasmas were measured with a absolutely calibrated BEUV calorimeter and a transmission grating spectrometer. 1.0 x 10 12 W/cm 2 is the optimal laser intensity to produced efficient BEUV light source plasmas with Tb and Gd targets. Maximum CE is achieved at 0.8% that is two times higher than the published CEs obtained with planar targets.
AB - Photo-lithography is a key technology for volume manufacture of high performance and compact semiconductor devices. Smaller and more complex structures can be fabricated by using shorter wavelength light in the photolithography. One of the most critical issues in development of the next generation photo-lithography is to increase energy conversion efficiency (CE) from laser to shorter wavelength light. Experimental database of beyond extreme ultraviolet (BEUV) radiation was obtained by using spherically symmetrical high-Z plasmas generated with spherically allocated laser beams. Absolute energy and spectra of BEUV light emitted from Tb, Gd, and Mo plasmas were measured with a absolutely calibrated BEUV calorimeter and a transmission grating spectrometer. 1.0 x 10 12 W/cm 2 is the optimal laser intensity to produced efficient BEUV light source plasmas with Tb and Gd targets. Maximum CE is achieved at 0.8% that is two times higher than the published CEs obtained with planar targets.
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UR - http://www.scopus.com/inward/citedby.url?scp=84964858751&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/688/1/012046
DO - 10.1088/1742-6596/688/1/012046
M3 - Conference article
AN - SCOPUS:84964858751
VL - 688
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012046
ER -