Bias-dependent etching of silicon in aqueous ammonia

H. Nojiri, Makoto Uchiyama

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The electrochemical characteristics of the bias-dependent controlled etching of silicon in an aqueous ammonia system have been experimentally studied. The experiment is carried out with the three-electrode method. It is found that the open-circuit potential (OCP) and the passivation potential (PP) for the etching shift with changes of operating conditions: flow rate, temperature and concentration of etchant. Additionally, the flatness of the etched surface is improved with an increase of the flow rate and anodic bias supply. Considering these correlations, the operating conditions for non-biased selective etching of one type over the opposite type (non-biased dopant-selective etching) have been found.

Original languageEnglish
Pages (from-to)167-172
Number of pages6
JournalSensors and Actuators: A. Physical
Volume34
Issue number2
DOIs
Publication statusPublished - Jan 1 1992

Fingerprint

Silicon
Ammonia
ammonia
Etching
etching
silicon
flow velocity
Flow rate
etchants
flatness
Passivation
passivity
Doping (additives)
Electrodes
electrodes
Networks (circuits)
shift
Experiments
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Instrumentation

Cite this

Bias-dependent etching of silicon in aqueous ammonia. / Nojiri, H.; Uchiyama, Makoto.

In: Sensors and Actuators: A. Physical, Vol. 34, No. 2, 01.01.1992, p. 167-172.

Research output: Contribution to journalArticle

Nojiri, H. ; Uchiyama, Makoto. / Bias-dependent etching of silicon in aqueous ammonia. In: Sensors and Actuators: A. Physical. 1992 ; Vol. 34, No. 2. pp. 167-172.
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