Bipolar carrier (e - /h + ) layer on clean surface of insulating BaTiO 3 crystal intrinsic to ferroelectrics

Yukio Watanabe, Daisuke Matsumoto, Yosuke Urakami, T. Arai, A. Masuda, S. W. Cheong

Research output: Contribution to journalConference article

11 Citations (Scopus)

Abstract

We report experimental observation of electron (e - )/hole (h + ) layer on the clean surface of insulating pure BaTiO3 single crystals in ultra high vacuum (UHV <10 -8 Pa). To our knowledge this is the first report of the bipolar surface carrier layer by the field effect on any oxide. The experiments here verify that both accumulation and inversion occur and the surface carrier layer is intrinsic, i.e., due to spontaneous polarization P S not to impurities and defects.

Original languageEnglish
Pages (from-to)23-37
Number of pages15
JournalFerroelectrics
Volume367
Issue number1 PART 1
DOIs
Publication statusPublished - Dec 1 2008
Event11th European Meeting on Ferroelectricity, EMF-2007 - Bled, Slovenia
Duration: Sep 3 2007Sep 7 2007

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Ferroelectric materials
Crystals
crystals
Ultrahigh vacuum
Oxides
ultrahigh vacuum
Single crystals
Impurities
Polarization
inversions
impurities
Defects
oxides
Electrons
single crystals
defects
polarization
electrons
Experiments

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Bipolar carrier (e - /h + ) layer on clean surface of insulating BaTiO 3 crystal intrinsic to ferroelectrics . / Watanabe, Yukio; Matsumoto, Daisuke; Urakami, Yosuke; Arai, T.; Masuda, A.; Cheong, S. W.

In: Ferroelectrics, Vol. 367, No. 1 PART 1, 01.12.2008, p. 23-37.

Research output: Contribution to journalConference article

Watanabe, Yukio ; Matsumoto, Daisuke ; Urakami, Yosuke ; Arai, T. ; Masuda, A. ; Cheong, S. W. / Bipolar carrier (e - /h + ) layer on clean surface of insulating BaTiO 3 crystal intrinsic to ferroelectrics In: Ferroelectrics. 2008 ; Vol. 367, No. 1 PART 1. pp. 23-37.
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AU - Cheong, S. W.

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