Bipolar carrier (e-/h+) layer on clean surface of insulating BaTiO3 crystal intrinsic to ferroelectrics

Yukio Watanabe; Daisuke Matsumoto; Yosuke Urakami; T. Arai; A. Masuda; S. W. Cheong

doi:10.1080/00150190802365640

Bipolar carrier (e^-/h⁺) layer on clean surface of insulating BaTiO₃ crystal intrinsic to ferroelectrics

Yukio Watanabe, Daisuke Matsumoto, Yosuke Urakami, T. Arai, A. Masuda, S. W. Cheong

Condensed Matter Physics

Research output: Contribution to journal › Conference article › peer-review

12 Citations (Scopus)

Abstract

We report experimental observation of electron (e^-)/hole (h ⁺) layer on the clean surface of insulating pure BaTiO3 single crystals in ultra high vacuum (UHV <10^-8 Pa). To our knowledge this is the first report of the bipolar surface carrier layer by the field effect on any oxide. The experiments here verify that both accumulation and inversion occur and the surface carrier layer is intrinsic, i.e., due to spontaneous polarization P_S not to impurities and defects.

Original language	English
Pages (from-to)	23-37
Number of pages	15
Journal	Ferroelectrics
Volume	367
Issue number	1 PART 1
DOIs	https://doi.org/10.1080/00150190802365640
Publication status	Published - 2008
Event	11th European Meeting on Ferroelectricity, EMF-2007 - Bled, Slovenia Duration: Sept 3 2007 → Sept 7 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1080/00150190802365640

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title = "Bipolar carrier (e-/h+) layer on clean surface of insulating BaTiO3 crystal intrinsic to ferroelectrics",

abstract = "We report experimental observation of electron (e-)/hole (h +) layer on the clean surface of insulating pure BaTiO3 single crystals in ultra high vacuum (UHV <10-8 Pa). To our knowledge this is the first report of the bipolar surface carrier layer by the field effect on any oxide. The experiments here verify that both accumulation and inversion occur and the surface carrier layer is intrinsic, i.e., due to spontaneous polarization PS not to impurities and defects.",

author = "Yukio Watanabe and Daisuke Matsumoto and Yosuke Urakami and T. Arai and A. Masuda and Cheong, {S. W.}",

note = "Funding Information: This work is supported by Grants-in-aid for Scientific Research from JSPS No. 19340084.; 11th European Meeting on Ferroelectricity, EMF-2007 ; Conference date: 03-09-2007 Through 07-09-2007",

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doi = "10.1080/00150190802365640",

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T1 - Bipolar carrier (e-/h+) layer on clean surface of insulating BaTiO3 crystal intrinsic to ferroelectrics

AU - Watanabe, Yukio

AU - Matsumoto, Daisuke

AU - Urakami, Yosuke

AU - Arai, T.

AU - Masuda, A.

AU - Cheong, S. W.

N1 - Funding Information: This work is supported by Grants-in-aid for Scientific Research from JSPS No. 19340084.

PY - 2008

Y1 - 2008

N2 - We report experimental observation of electron (e-)/hole (h +) layer on the clean surface of insulating pure BaTiO3 single crystals in ultra high vacuum (UHV <10-8 Pa). To our knowledge this is the first report of the bipolar surface carrier layer by the field effect on any oxide. The experiments here verify that both accumulation and inversion occur and the surface carrier layer is intrinsic, i.e., due to spontaneous polarization PS not to impurities and defects.

AB - We report experimental observation of electron (e-)/hole (h +) layer on the clean surface of insulating pure BaTiO3 single crystals in ultra high vacuum (UHV <10-8 Pa). To our knowledge this is the first report of the bipolar surface carrier layer by the field effect on any oxide. The experiments here verify that both accumulation and inversion occur and the surface carrier layer is intrinsic, i.e., due to spontaneous polarization PS not to impurities and defects.

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U2 - 10.1080/00150190802365640

DO - 10.1080/00150190802365640

M3 - Conference article

AN - SCOPUS:74549118734

SN - 0015-0193

VL - 367

SP - 23

EP - 37

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1 PART 1

T2 - 11th European Meeting on Ferroelectricity, EMF-2007

Y2 - 3 September 2007 through 7 September 2007

ER -

Bipolar carrier (e^-/h⁺) layer on clean surface of insulating BaTiO₃ crystal intrinsic to ferroelectrics

Abstract

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