Bipolar carrier (e-/h+) layer on clean surface of insulating BaTiO3 crystal intrinsic to ferroelectrics

Yukio Watanabe, Daisuke Matsumoto, Yosuke Urakami, T. Arai, A. Masuda, S. W. Cheong

Research output: Contribution to journalConference article

11 Citations (Scopus)

Abstract

We report experimental observation of electron (e-)/hole (h +) layer on the clean surface of insulating pure BaTiO3 single crystals in ultra high vacuum (UHV <10-8 Pa). To our knowledge this is the first report of the bipolar surface carrier layer by the field effect on any oxide. The experiments here verify that both accumulation and inversion occur and the surface carrier layer is intrinsic, i.e., due to spontaneous polarization PS not to impurities and defects.

Original languageEnglish
Pages (from-to)23-37
Number of pages15
JournalFerroelectrics
Volume367
Issue number1 PART 1
DOIs
Publication statusPublished - Dec 1 2008
Event11th European Meeting on Ferroelectricity, EMF-2007 - Bled, Slovenia
Duration: Sep 3 2007Sep 7 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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