TY - JOUR
T1 - Bipolar characteristics of an organic light-emitting filed effect transistor using a TPTPT and NTCDA co-deposited layer
AU - Uchiuzou, Hiroyuki
AU - Oyamada, Takahito
AU - Sasabe, Hiroyuki
AU - Adachi, Chihaya
PY - 2006/1/1
Y1 - 2006/1/1
N2 - We fabricated an organic light-emitting field effect transistors (OLEFET) using a co-deposited layer of TPTPT and NTCDA which has p-type and n-type semiconducting behaviors, respectively. The organic layer was formed on a comb type electrode (source-drain electrodes) with a channel length of 25μm on a p-Si/SiO2 substrate. Bipolar and EL characteristics were investigated by changing co-deposition ratio of TPTPT and NTCDA. In the optimum deposition ratio, we observed typical ambipolar characteristics, demonstrating saturation current characteristics at low Vd(source-drain voltage), followed by divergent current characteristics at high Vd.
AB - We fabricated an organic light-emitting field effect transistors (OLEFET) using a co-deposited layer of TPTPT and NTCDA which has p-type and n-type semiconducting behaviors, respectively. The organic layer was formed on a comb type electrode (source-drain electrodes) with a channel length of 25μm on a p-Si/SiO2 substrate. Bipolar and EL characteristics were investigated by changing co-deposition ratio of TPTPT and NTCDA. In the optimum deposition ratio, we observed typical ambipolar characteristics, demonstrating saturation current characteristics at low Vd(source-drain voltage), followed by divergent current characteristics at high Vd.
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U2 - 10.1541/ieejeiss.126.1107
DO - 10.1541/ieejeiss.126.1107
M3 - Article
AN - SCOPUS:33748560100
SN - 0385-4221
VL - 126
SP - 7+1107-1111
JO - IEEJ Transactions on Electronics, Information and Systems
JF - IEEJ Transactions on Electronics, Information and Systems
IS - 9
ER -