Bipolar characteristics of an organic light-emitting filed effect transistor using a TPTPT and NTCDA co-deposited layer

Hiroyuki Uchiuzou, Takahito Oyamada, Hiroyuki Sasabe, Chihaya Adachi

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Abstract

We fabricated an organic light-emitting field effect transistors (OLEFET) using a co-deposited layer of TPTPT and NTCDA which has p-type and n-type semiconducting behaviors, respectively. The organic layer was formed on a comb type electrode (source-drain electrodes) with a channel length of 25μm on a p-Si/SiO2 substrate. Bipolar and EL characteristics were investigated by changing co-deposition ratio of TPTPT and NTCDA. In the optimum deposition ratio, we observed typical ambipolar characteristics, demonstrating saturation current characteristics at low Vd(source-drain voltage), followed by divergent current characteristics at high Vd.

Original languageEnglish
JournalIEEJ Transactions on Electronics, Information and Systems
Volume126
Issue number9
Publication statusPublished - Jan 1 2006
Externally publishedYes

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Transistors
Electrodes
Field effect transistors
Electric potential
Substrates

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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Bipolar characteristics of an organic light-emitting filed effect transistor using a TPTPT and NTCDA co-deposited layer. / Uchiuzou, Hiroyuki; Oyamada, Takahito; Sasabe, Hiroyuki; Adachi, Chihaya.

In: IEEJ Transactions on Electronics, Information and Systems, Vol. 126, No. 9, 01.01.2006.

Research output: Contribution to journalArticle

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