TY - JOUR
T1 - Bonding of lithium niobate to silicon in ambient air using laser irradiation
AU - Kawano, Hiroki
AU - Takigawa, Ryo
AU - Ikenoue, Hiroshi
AU - Asano, Tanemasa
N1 - Funding Information:
The authors thank Dr. Akihiro Ikeda of Kyushu University for his useful discussion. Part of this work was supported by JSPS KAKENHI Grant Number 80706846.
Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016/8
Y1 - 2016/8
N2 - In this paper, we introduce a bonding method in ambient air using laser irradiation to the face-to-face interface of dissimilar materials. This method is performed while keeping whole wafers of the materials at room temperature. We demonstrate the bonding of LiNbO3 to Si using pulsed nanosecond green laser irradiation. Laser use can minimize thermal stress owing to a large thermal expansion mismatch. The bonding characteristic obtained by an irradiation laser up to 2.5 J/cm2 in fluence is investigated. It is found that a LiNbO3 chip is strongly bonded to a Si chip by setting the laser fluence at the optimum range. A bond strength of over 2MPa, which may be enough for the device applications, can be obtained.
AB - In this paper, we introduce a bonding method in ambient air using laser irradiation to the face-to-face interface of dissimilar materials. This method is performed while keeping whole wafers of the materials at room temperature. We demonstrate the bonding of LiNbO3 to Si using pulsed nanosecond green laser irradiation. Laser use can minimize thermal stress owing to a large thermal expansion mismatch. The bonding characteristic obtained by an irradiation laser up to 2.5 J/cm2 in fluence is investigated. It is found that a LiNbO3 chip is strongly bonded to a Si chip by setting the laser fluence at the optimum range. A bond strength of over 2MPa, which may be enough for the device applications, can be obtained.
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U2 - 10.7567/JJAP.55.08RB09
DO - 10.7567/JJAP.55.08RB09
M3 - Article
AN - SCOPUS:84989323055
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8
M1 - 08RB09
ER -