Bonding of lithium niobate to silicon in ambient air using laser irradiation

Hiroki Kawano, Ryo Takigawa, Hiroshi Ikenoue, Tanemasa Asano

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this paper, we introduce a bonding method in ambient air using laser irradiation to the face-to-face interface of dissimilar materials. This method is performed while keeping whole wafers of the materials at room temperature. We demonstrate the bonding of LiNbO3 to Si using pulsed nanosecond green laser irradiation. Laser use can minimize thermal stress owing to a large thermal expansion mismatch. The bonding characteristic obtained by an irradiation laser up to 2.5 J/cm2 in fluence is investigated. It is found that a LiNbO3 chip is strongly bonded to a Si chip by setting the laser fluence at the optimum range. A bond strength of over 2MPa, which may be enough for the device applications, can be obtained.

Original languageEnglish
Article number08RB09
JournalJapanese Journal of Applied Physics
Volume55
Issue number8
DOIs
Publication statusPublished - Aug 1 2016

Fingerprint

Laser beam effects
lithium niobates
Lithium
Silicon
irradiation
air
silicon
Air
lasers
Dissimilar materials
Lasers
fluence
Thermal stress
Thermal expansion
chips
thermal stresses
thermal expansion
wafers
room temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Bonding of lithium niobate to silicon in ambient air using laser irradiation. / Kawano, Hiroki; Takigawa, Ryo; Ikenoue, Hiroshi; Asano, Tanemasa.

In: Japanese Journal of Applied Physics, Vol. 55, No. 8, 08RB09, 01.08.2016.

Research output: Contribution to journalArticle

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