Abstract
In this paper, we introduce a bonding method in ambient air using laser irradiation to the face-to-face interface of dissimilar materials. This method is performed while keeping whole wafers of the materials at room temperature. We demonstrate the bonding of LiNbO3 to Si using pulsed nanosecond green laser irradiation. Laser use can minimize thermal stress owing to a large thermal expansion mismatch. The bonding characteristic obtained by an irradiation laser up to 2.5 J/cm2 in fluence is investigated. It is found that a LiNbO3 chip is strongly bonded to a Si chip by setting the laser fluence at the optimum range. A bond strength of over 2MPa, which may be enough for the device applications, can be obtained.
| Original language | English |
|---|---|
| Article number | 08RB09 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 55 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - Aug 1 2016 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Bonding of lithium niobate to silicon in ambient air using laser irradiation. / Kawano, Hiroki; Takigawa, Ryo; Ikenoue, Hiroshi; Asano, Tanemasa.
In: Japanese Journal of Applied Physics, Vol. 55, No. 8, 08RB09, 01.08.2016.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Bonding of lithium niobate to silicon in ambient air using laser irradiation
AU - Kawano, Hiroki
AU - Takigawa, Ryo
AU - Ikenoue, Hiroshi
AU - Asano, Tanemasa
PY - 2016/8/1
Y1 - 2016/8/1
N2 - In this paper, we introduce a bonding method in ambient air using laser irradiation to the face-to-face interface of dissimilar materials. This method is performed while keeping whole wafers of the materials at room temperature. We demonstrate the bonding of LiNbO3 to Si using pulsed nanosecond green laser irradiation. Laser use can minimize thermal stress owing to a large thermal expansion mismatch. The bonding characteristic obtained by an irradiation laser up to 2.5 J/cm2 in fluence is investigated. It is found that a LiNbO3 chip is strongly bonded to a Si chip by setting the laser fluence at the optimum range. A bond strength of over 2MPa, which may be enough for the device applications, can be obtained.
AB - In this paper, we introduce a bonding method in ambient air using laser irradiation to the face-to-face interface of dissimilar materials. This method is performed while keeping whole wafers of the materials at room temperature. We demonstrate the bonding of LiNbO3 to Si using pulsed nanosecond green laser irradiation. Laser use can minimize thermal stress owing to a large thermal expansion mismatch. The bonding characteristic obtained by an irradiation laser up to 2.5 J/cm2 in fluence is investigated. It is found that a LiNbO3 chip is strongly bonded to a Si chip by setting the laser fluence at the optimum range. A bond strength of over 2MPa, which may be enough for the device applications, can be obtained.
UR - http://www.scopus.com/inward/record.url?scp=84989323055&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84989323055&partnerID=8YFLogxK
U2 - 10.7567/JJAP.55.08RB09
DO - 10.7567/JJAP.55.08RB09
M3 - Article
AN - SCOPUS:84989323055
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8
M1 - 08RB09
ER -