Border-trap characterization for Ge gate stacks with Thin GeOx layer using deep-level transient spectroscopy

Hiroshi Nakashima, Wei Chen Wen, Keisuke Yamamoto, Dong Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The deep-level transient spectroscopy (DLTS) measurements for the SiO2/GeO2/Ge gate stacks represent the different pulse height dependences of the border trap (BT) signals for p- and n-MOSCAPs. We propose the tunneling models to/from BT in GeO2 to explain the difference. Based on this model, the BTs in Al2O3/GeOx/p-Ge gate stacks were characterized using DLTS. Through evaluating the gate stacks with different GeOx thickness, the respective BTs in Al2O3, Al2O3/GeOx interface region, and GeOx were detected. The density of BT (Nbt) in Al2O3 (6~9 × 1017 cm-3) is lower than those in GeOx (~2 × 1018 cm-3), and the highest Nbt (~1 × 1019 cm-3) was found in Al2O3/GeOx interface region. Ge p-MOSFETs with Al2O3/GeOx/pGe gate stacks were fabricated and analyzed. We confirmed that the ITs and the BTs near to valence band edge of Ge affect the effective mobility of Ge p-MOSFETs in high field region.

Original languageEnglish
Title of host publicationPRiME 2020
Subtitle of host publicationSiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9
EditorsQ. Liu, J. M. Hartmann, J. R. Holt, X. Gong, V. Jain, G. Niu, G. Masini, A. Ogura, S. Miyazaki, M. Ostling, W. Bi, A. Schulze, A. Mai
PublisherIOP Publishing Ltd.
Number of pages10
ISBN (Electronic)9781607685395
Publication statusPublished - 2020
EventPacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 - Honolulu, United States
Duration: Oct 4 2020Oct 9 2020

Publication series

NameECS Transactions
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862


ConferencePacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200
Country/TerritoryUnited States

All Science Journal Classification (ASJC) codes

  • Engineering(all)


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