Bottom-up fabrication of redox-active metal complex oligomer wires on an H-terminated Si(111) surface

Hiroaki Maeda, Ryota Sakamoto, Yoshihiko Nishimori, Junya Sendo, Fumiyuki Toshimitsu, Yoshinori Yamanoi, Hiroshi Nishihara

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)

Abstract

Linear and branched Fe(tpy)2 complex oligomer wires were quantitatively formed on hydrogen-terminated silicon wafers by means of hydrosilylation of ethynylterpyridine and following stepwise coordination reactions, and the redox property of surface-attached species and its photosensitivity can be controlled by the doping density of the silicon wafers.

Original languageEnglish
Pages (from-to)8644-8646
Number of pages3
JournalChemical Communications
Volume47
Issue number30
DOIs
Publication statusPublished - Aug 14 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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