Breakdown behaviour of high-voltage GaN-HEMTs

W. Saito, T. Suwa, T. Uchihara, T. Naka, T. Kobayashi

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11 Citations (Scopus)

Abstract

The breakdown mechanism of high-voltage GaN-HEMT was analysed using the experimental I-V characteristics and two-dimensional device simulation results. The holes are generated by the impact ionization under high applied voltage. A part of the generated holes accumulates beneath the gate and lowers the gate potential barrier. As a result, the source leakage current flowing over the gate potential increases rapidly and breakdown occurs. From these results, suppression of the impact ionization and the hole remove structure are effective for a highly reliable design concerning the breakdown.

Original languageEnglish
Pages (from-to)1682-1686
Number of pages5
JournalMicroelectronics Reliability
Volume55
Issue number9-10
DOIs
Publication statusPublished - Aug 2015
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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