Breakthrough of drain current capability and on-resistance limits by gate-connected superjunction MOSFET

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

This paper reports a new structure of Gate-connected Superjunction (GS) MOSFET to cope with both high drain current density and low on-resistance. The conventional superjunction (SJ) structure is attractive to reduce the specific on-resistance dramatically due to the charge compensation concept. The drain saturation current density, however, is limited by JFET depletion at the bottom region of the SJ structure even if the on-resistance can be reduced by the lateral SJ pitch narrowing. The accumulation-mode operation is effective not only for low on-resistance but also for suppressing the depletion at the SJ bottom due to the accumulation carriers. This paper reports the potential of the GS-MOSFET for high drain current density and low on-resistance based on the simulation results. Dynamic characteristics are also compared with the conventional SJ-MOSFET.

Original languageEnglish
Title of host publication2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages36-39
Number of pages4
ISBN (Electronic)9781538629260
DOIs
Publication statusPublished - Jun 22 2018
Externally publishedYes
Event30th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018 - Chicago, United States
Duration: May 13 2018May 17 2018

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2018-May
ISSN (Print)1063-6854

Conference

Conference30th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018
CountryUnited States
CityChicago
Period5/13/185/17/18

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Breakthrough of drain current capability and on-resistance limits by gate-connected superjunction MOSFET'. Together they form a unique fingerprint.

Cite this