Bulk and surface effects on the polytype stability in SiC crystals

Frédéric Mercier, Shinichi Nishizawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We investigated with ab initio calculations the 3C-, 6H-, 4H- and 2H-SiC polytypes. We discuss the geometry and the energetics of bulk and surface relaxed structures ((0001) Si face and the (000̄1) C face surfaces). The polytype stability is discussed regarding the bulk and surface effects.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
Pages41-44
Number of pages4
DOIs
Publication statusPublished - May 28 2012
Externally publishedYes
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period9/11/119/16/11

Fingerprint

Crystals
crystals
Geometry
geometry

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Mercier, F., & Nishizawa, S. (2012). Bulk and surface effects on the polytype stability in SiC crystals. In Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 41-44). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.41

Bulk and surface effects on the polytype stability in SiC crystals. / Mercier, Frédéric; Nishizawa, Shinichi.

Silicon Carbide and Related Materials 2011, ICSCRM 2011. 2012. p. 41-44 (Materials Science Forum; Vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mercier, F & Nishizawa, S 2012, Bulk and surface effects on the polytype stability in SiC crystals. in Silicon Carbide and Related Materials 2011, ICSCRM 2011. Materials Science Forum, vol. 717-720, pp. 41-44, 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011, Cleveland, OH, United States, 9/11/11. https://doi.org/10.4028/www.scientific.net/MSF.717-720.41
Mercier F, Nishizawa S. Bulk and surface effects on the polytype stability in SiC crystals. In Silicon Carbide and Related Materials 2011, ICSCRM 2011. 2012. p. 41-44. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.717-720.41
Mercier, Frédéric ; Nishizawa, Shinichi. / Bulk and surface effects on the polytype stability in SiC crystals. Silicon Carbide and Related Materials 2011, ICSCRM 2011. 2012. pp. 41-44 (Materials Science Forum).
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