Bulk-sensitive high-resolution photoemission study of a temperature-induced valence transition system EuPd2Si2

Kojiro Mimura; Yukihiro Taguchi; Shuichi Fukuda; Akihiro Mitsuda; Junji Sakurai; Kouichi Ichikawa; Osamu Aita

doi:10.1016/j.elspec.2004.02.098

Bulk-sensitive high-resolution photoemission study of a temperature-induced valence transition system EuPd₂Si₂

Kojiro Mimura, Yukihiro Taguchi, Shuichi Fukuda, Akihiro Mitsuda, Junji Sakurai, Kouichi Ichikawa, Osamu Aita

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Eu 4f electronic structures of a temperature-induced valence transition system EuPd₂Si₂ have been investigated by bulk-sensitive high-resolution photoemission spectroscopy at temperatures from 20 to 300 K. The bulk Eu²⁺ 4f component is definitely distinguished from two surface Eu²⁺ 4f components. The changes in the spectral intensity of the bulk Eu²⁺ and Eu³⁺ 4f configurations and in the energy separation between these states are observed in the temperature dependent photoemission spectra. These temperature dependences are related to the valence transition of EuPd₂Si₂. The Eu mean valence is evaluated to be 2.75±0.03 at 20K and 2.30 ± 0.05 at 300 K. These values are in good agreement with those evaluated from Mössbauer and Eu L _III-edge X-ray absorption measurements.

Original language	English
Pages (from-to)	529-533
Number of pages	5
Journal	Journal of Electron Spectroscopy and Related Phenomena
Volume	137-140
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.elspec.2004.02.098
Publication status	Published - Jul 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Radiation
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Spectroscopy
Physical and Theoretical Chemistry

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10.1016/j.elspec.2004.02.098

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title = "Bulk-sensitive high-resolution photoemission study of a temperature-induced valence transition system EuPd2Si2",

abstract = "Eu 4f electronic structures of a temperature-induced valence transition system EuPd2Si2 have been investigated by bulk-sensitive high-resolution photoemission spectroscopy at temperatures from 20 to 300 K. The bulk Eu2+ 4f component is definitely distinguished from two surface Eu2+ 4f components. The changes in the spectral intensity of the bulk Eu2+ and Eu3+ 4f configurations and in the energy separation between these states are observed in the temperature dependent photoemission spectra. These temperature dependences are related to the valence transition of EuPd2Si2. The Eu mean valence is evaluated to be 2.75±0.03 at 20K and 2.30 ± 0.05 at 300 K. These values are in good agreement with those evaluated from M{\"o}ssbauer and Eu L III-edge X-ray absorption measurements.",

author = "Kojiro Mimura and Yukihiro Taguchi and Shuichi Fukuda and Akihiro Mitsuda and Junji Sakurai and Kouichi Ichikawa and Osamu Aita",

year = "2004",

month = jul,

doi = "10.1016/j.elspec.2004.02.098",

language = "English",

volume = "137-140",

pages = "529--533",

journal = "Journal of Electron Spectroscopy and Related Phenomena",

issn = "0368-2048",

publisher = "Elsevier",

number = "SPEC. ISS.",

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TY - JOUR

T1 - Bulk-sensitive high-resolution photoemission study of a temperature-induced valence transition system EuPd2Si2

AU - Mimura, Kojiro

AU - Taguchi, Yukihiro

AU - Fukuda, Shuichi

AU - Mitsuda, Akihiro

AU - Sakurai, Junji

AU - Ichikawa, Kouichi

AU - Aita, Osamu

PY - 2004/7

Y1 - 2004/7

N2 - Eu 4f electronic structures of a temperature-induced valence transition system EuPd2Si2 have been investigated by bulk-sensitive high-resolution photoemission spectroscopy at temperatures from 20 to 300 K. The bulk Eu2+ 4f component is definitely distinguished from two surface Eu2+ 4f components. The changes in the spectral intensity of the bulk Eu2+ and Eu3+ 4f configurations and in the energy separation between these states are observed in the temperature dependent photoemission spectra. These temperature dependences are related to the valence transition of EuPd2Si2. The Eu mean valence is evaluated to be 2.75±0.03 at 20K and 2.30 ± 0.05 at 300 K. These values are in good agreement with those evaluated from Mössbauer and Eu L III-edge X-ray absorption measurements.

AB - Eu 4f electronic structures of a temperature-induced valence transition system EuPd2Si2 have been investigated by bulk-sensitive high-resolution photoemission spectroscopy at temperatures from 20 to 300 K. The bulk Eu2+ 4f component is definitely distinguished from two surface Eu2+ 4f components. The changes in the spectral intensity of the bulk Eu2+ and Eu3+ 4f configurations and in the energy separation between these states are observed in the temperature dependent photoemission spectra. These temperature dependences are related to the valence transition of EuPd2Si2. The Eu mean valence is evaluated to be 2.75±0.03 at 20K and 2.30 ± 0.05 at 300 K. These values are in good agreement with those evaluated from Mössbauer and Eu L III-edge X-ray absorption measurements.

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JO - Journal of Electron Spectroscopy and Related Phenomena

JF - Journal of Electron Spectroscopy and Related Phenomena

IS - SPEC. ISS.

ER -

Bulk-sensitive high-resolution photoemission study of a temperature-induced valence transition system EuPd₂Si₂

Abstract

All Science Journal Classification (ASJC) codes

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