Bulk-sensitive high-resolution photoemission study of a temperature-induced valence transition system EuPd2Si2

Kojiro Mimura, Yukihiro Taguchi, Shuichi Fukuda, Akihiro Mitsuda, Junji Sakurai, Kouichi Ichikawa, Osamu Aita

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Abstract

Eu 4f electronic structures of a temperature-induced valence transition system EuPd2Si2 have been investigated by bulk-sensitive high-resolution photoemission spectroscopy at temperatures from 20 to 300 K. The bulk Eu2+ 4f component is definitely distinguished from two surface Eu2+ 4f components. The changes in the spectral intensity of the bulk Eu2+ and Eu3+ 4f configurations and in the energy separation between these states are observed in the temperature dependent photoemission spectra. These temperature dependences are related to the valence transition of EuPd2Si2. The Eu mean valence is evaluated to be 2.75±0.03 at 20K and 2.30 ± 0.05 at 300 K. These values are in good agreement with those evaluated from Mössbauer and Eu L III-edge X-ray absorption measurements.

Original languageEnglish
Pages (from-to)529-533
Number of pages5
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume137-140
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - Jul 1 2004
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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