Calculation of lattice constant of 4H-SiC as a function of impurity concentration

Tsubasa Matsumoto, Shinichi Nishizawa, Satoshi Yamasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

18 Citations (Scopus)

Abstract

Calculations of lattice constant of 4H-SiC and diamond have been carried out. Lattice constant of 4H-SiC trends to decrease when nitrogen concentration increases. On the other hand, lattice constant of 4H-SiC trends to increase when aluminum concentration increases. Lattice constant of boron and phosphorus doped diamond trends to increase when impurity concentration increases. The effect of phosphorus on diamond lattice constant is about six times larger than that of boron.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2009
Subtitle of host publicationICSCRM 2009
PublisherTrans Tech Publications Ltd
Pages247-250
Number of pages4
ISBN (Print)0878492798, 9780878492794
DOIs
Publication statusPublished - Jan 1 2010
Externally publishedYes
Event13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany
Duration: Oct 11 2009Oct 16 2009

Publication series

NameMaterials Science Forum
Volume645-648
ISSN (Print)0255-5476

Other

Other13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
CountryGermany
CityNurnberg
Period10/11/0910/16/09

Fingerprint

Lattice constants
Diamond
Impurities
impurities
Diamonds
Boron
diamonds
trends
Phosphorus
phosphorus
boron
Aluminum
Nitrogen
aluminum
nitrogen

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Matsumoto, T., Nishizawa, S., & Yamasaki, S. (2010). Calculation of lattice constant of 4H-SiC as a function of impurity concentration. In Silicon Carbide and Related Materials 2009: ICSCRM 2009 (pp. 247-250). (Materials Science Forum; Vol. 645-648). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.645-648.247

Calculation of lattice constant of 4H-SiC as a function of impurity concentration. / Matsumoto, Tsubasa; Nishizawa, Shinichi; Yamasaki, Satoshi.

Silicon Carbide and Related Materials 2009: ICSCRM 2009. Trans Tech Publications Ltd, 2010. p. 247-250 (Materials Science Forum; Vol. 645-648).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Matsumoto, T, Nishizawa, S & Yamasaki, S 2010, Calculation of lattice constant of 4H-SiC as a function of impurity concentration. in Silicon Carbide and Related Materials 2009: ICSCRM 2009. Materials Science Forum, vol. 645-648, Trans Tech Publications Ltd, pp. 247-250, 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009, Nurnberg, Germany, 10/11/09. https://doi.org/10.4028/www.scientific.net/MSF.645-648.247
Matsumoto T, Nishizawa S, Yamasaki S. Calculation of lattice constant of 4H-SiC as a function of impurity concentration. In Silicon Carbide and Related Materials 2009: ICSCRM 2009. Trans Tech Publications Ltd. 2010. p. 247-250. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.645-648.247
Matsumoto, Tsubasa ; Nishizawa, Shinichi ; Yamasaki, Satoshi. / Calculation of lattice constant of 4H-SiC as a function of impurity concentration. Silicon Carbide and Related Materials 2009: ICSCRM 2009. Trans Tech Publications Ltd, 2010. pp. 247-250 (Materials Science Forum).
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