Abstract
Light-hadron induced single-event upset (SEU) cross sections for semiconductor memory devices are calculated by the Burst Generation Rate (BGR) method using the LA150 data and JQMD calculation in the incident energy range between 20 MeV and 3 GeV. The calculated results are compared with experimental SEU cross sections, and the validity of the calculation method and the nuclear data used is examined. The range of the incident energy and the atomic and mass numbers of the reaction products that provides the important effects on SEU are investigated.
| Original language | English |
|---|---|
| Pages (from-to) | 1380-1383 |
| Number of pages | 4 |
| Journal | journal of nuclear science and technology |
| Volume | 39 |
| DOIs | |
| Publication status | Published - Aug 2002 |
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
Fingerprint Dive into the research topics of 'Calculation of light-hadron induced single-event upset cross sections for semicond uctor memory devices'. Together they form a unique fingerprint.
Cite this
Ikeuchi, T., Watanabe, Y., Sun, W., & Nakashima, H. (2002). Calculation of light-hadron induced single-event upset cross sections for semicond uctor memory devices. journal of nuclear science and technology, 39, 1380-1383. https://doi.org/10.1080/00223131.2002.10875362