Capacitor applications of c-axis-oriented bismuth layer structured ferroelectric thin films

Takashi Kojima, Takayuki Watanabe, Hiroshi Funakubo, Yukio Sakashita, Takahiro Oikawa

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

C-axis-oriented epitaxial and preferred-oriented Bi4Ti 3O12(BIT) films were deposited on (100)SrRuO 3//(100)SrTiO3 and (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. Preferred-oriented films were deposited at 500°C by the sequential introduction of Bi and Ti sources followed by the crystal structure of BIT along c-axis, while the epitaxial films were deposited at 640°C. For the epitaxial films, the relative dielectric constant was almost constant with decreasing the film thickness down to 18 nm and the increase of the electric field of 100 kV/cm. The data of single-axis-oriented film was almost equal to those of epitaxial one. This suggests that not only the epitaxial films but also the single-axis-oriented ones are useful candidates for capacitor applications.

Original languageEnglish
Pages (from-to)57-64
Number of pages8
JournalCeramic Engineering and Science Proceedings
Volume24
Issue number4
Publication statusPublished - Dec 8 2003
Externally publishedYes
Event27th International Cocoa Beach Conference on Advanced Ceramics and Composites: B - Cocoa Beach, FL, United States
Duration: Jan 26 2003Jan 31 2003

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

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