Capacitor applications of c-axis-oriented bismuth layer structured ferroelectric thin films

Takashi Kojima; Takayuki Watanabe; Hiroshi Funakubo; Yukio Sakashita; Takahiro Oikawa

Capacitor applications of c-axis-oriented bismuth layer structured ferroelectric thin films

Takashi Kojima, Takayuki Watanabe, Hiroshi Funakubo, Yukio Sakashita, Takahiro Oikawa

Research output: Contribution to journal › Conference article › peer-review

Abstract

C-axis-oriented epitaxial and preferred-oriented Bi₄Ti ₃O₁₂(BIT) films were deposited on (100)SrRuO ₃//(100)SrTiO₃ and (111)Pt/Ti/SiO₂/Si substrates by metalorganic chemical vapor deposition. Preferred-oriented films were deposited at 500°C by the sequential introduction of Bi and Ti sources followed by the crystal structure of BIT along c-axis, while the epitaxial films were deposited at 640°C. For the epitaxial films, the relative dielectric constant was almost constant with decreasing the film thickness down to 18 nm and the increase of the electric field of 100 kV/cm. The data of single-axis-oriented film was almost equal to those of epitaxial one. This suggests that not only the epitaxial films but also the single-axis-oriented ones are useful candidates for capacitor applications.

Original language	English
Pages (from-to)	57-64
Number of pages	8
Journal	Ceramic Engineering and Science Proceedings
Volume	24
Issue number	4
Publication status	Published - Dec 8 2003
Externally published	Yes
Event	27th International Cocoa Beach Conference on Advanced Ceramics and Composites: B - Cocoa Beach, FL, United States Duration: Jan 26 2003 → Jan 31 2003

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Materials Chemistry

Cite this

@article{b65425a82cf04b7c8a06d5b0afa7670b,

title = "Capacitor applications of c-axis-oriented bismuth layer structured ferroelectric thin films",

abstract = "C-axis-oriented epitaxial and preferred-oriented Bi4Ti 3O12(BIT) films were deposited on (100)SrRuO 3//(100)SrTiO3 and (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. Preferred-oriented films were deposited at 500°C by the sequential introduction of Bi and Ti sources followed by the crystal structure of BIT along c-axis, while the epitaxial films were deposited at 640°C. For the epitaxial films, the relative dielectric constant was almost constant with decreasing the film thickness down to 18 nm and the increase of the electric field of 100 kV/cm. The data of single-axis-oriented film was almost equal to those of epitaxial one. This suggests that not only the epitaxial films but also the single-axis-oriented ones are useful candidates for capacitor applications.",

author = "Takashi Kojima and Takayuki Watanabe and Hiroshi Funakubo and Yukio Sakashita and Takahiro Oikawa",

year = "2003",

month = dec,

day = "8",

language = "English",

volume = "24",

pages = "57--64",

journal = "Ceramic Engineering and Science Proceedings",

issn = "0196-6219",

publisher = "American Ceramic Society",

number = "4",

note = "27th International Cocoa Beach Conference on Advanced Ceramics and Composites: B ; Conference date: 26-01-2003 Through 31-01-2003",

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TY - JOUR

T1 - Capacitor applications of c-axis-oriented bismuth layer structured ferroelectric thin films

AU - Kojima, Takashi

AU - Watanabe, Takayuki

AU - Funakubo, Hiroshi

AU - Sakashita, Yukio

AU - Oikawa, Takahiro

PY - 2003/12/8

Y1 - 2003/12/8

N2 - C-axis-oriented epitaxial and preferred-oriented Bi4Ti 3O12(BIT) films were deposited on (100)SrRuO 3//(100)SrTiO3 and (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. Preferred-oriented films were deposited at 500°C by the sequential introduction of Bi and Ti sources followed by the crystal structure of BIT along c-axis, while the epitaxial films were deposited at 640°C. For the epitaxial films, the relative dielectric constant was almost constant with decreasing the film thickness down to 18 nm and the increase of the electric field of 100 kV/cm. The data of single-axis-oriented film was almost equal to those of epitaxial one. This suggests that not only the epitaxial films but also the single-axis-oriented ones are useful candidates for capacitor applications.

AB - C-axis-oriented epitaxial and preferred-oriented Bi4Ti 3O12(BIT) films were deposited on (100)SrRuO 3//(100)SrTiO3 and (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. Preferred-oriented films were deposited at 500°C by the sequential introduction of Bi and Ti sources followed by the crystal structure of BIT along c-axis, while the epitaxial films were deposited at 640°C. For the epitaxial films, the relative dielectric constant was almost constant with decreasing the film thickness down to 18 nm and the increase of the electric field of 100 kV/cm. The data of single-axis-oriented film was almost equal to those of epitaxial one. This suggests that not only the epitaxial films but also the single-axis-oriented ones are useful candidates for capacitor applications.

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M3 - Conference article

AN - SCOPUS:0344064785

VL - 24

SP - 57

EP - 64

JO - Ceramic Engineering and Science Proceedings

JF - Ceramic Engineering and Science Proceedings

SN - 0196-6219

IS - 4

T2 - 27th International Cocoa Beach Conference on Advanced Ceramics and Composites: B

Y2 - 26 January 2003 through 31 January 2003

ER -

Capacitor applications of c-axis-oriented bismuth layer structured ferroelectric thin films

Abstract

All Science Journal Classification (ASJC) codes

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