Abstract
C-axis-oriented epitaxial and preferred-oriented Bi4Ti 3O12(BIT) films were deposited on (100)SrRuO 3//(100)SrTiO3 and (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. Preferred-oriented films were deposited at 500°C by the sequential introduction of Bi and Ti sources followed by the crystal structure of BIT along c-axis, while the epitaxial films were deposited at 640°C. For the epitaxial films, the relative dielectric constant was almost constant with decreasing the film thickness down to 18 nm and the increase of the electric field of 100 kV/cm. The data of single-axis-oriented film was almost equal to those of epitaxial one. This suggests that not only the epitaxial films but also the single-axis-oriented ones are useful candidates for capacitor applications.
Original language | English |
---|---|
Pages (from-to) | 57-64 |
Number of pages | 8 |
Journal | Ceramic Engineering and Science Proceedings |
Volume | 24 |
Issue number | 4 |
Publication status | Published - Dec 8 2003 |
Externally published | Yes |
Event | 27th International Cocoa Beach Conference on Advanced Ceramics and Composites: B - Cocoa Beach, FL, United States Duration: Jan 26 2003 → Jan 31 2003 |
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Materials Chemistry