Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors

Zai Xing Yang, Ning Han, Fengyun Wang, Ho Yuen Cheung, Xiaoling Shi, Senpo Yip, Takfu Hung, Min Hyung Lee, Chun Yuen Wong, Johnny C. Ho

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

Due to the unique physical properties, small bandgap III-V semiconductor nanowires such as InAs and InSb have been extensively studied for the next-generation high-speed and high-frequency electronics. However, further CMOS applications are still limited by the lack of efficient p-doping in these nanowire materials for high-performance p-channel devices. Here, we demonstrate a simple and effective in situ doping technique in the solid-source chemical vapor deposition of InSb nanowires on amorphous substrates employing carbon dopants. The grown nanowires exhibit excellent crystallinity and uniform stoichiometric composition along the entire length of the nanowires. More importantly, the versatility of this doping scheme is illustrated by the fabrication of high-performance p-channel nanowire field-effect-transistors. High electrically active carbon concentrations of ∼7.5 × 10 17 cm-3 and field-effect hole mobility of ∼140 cm 2 V-1 s-1 are achieved which are essential for compensating the electron-rich surface layers of InSb to enable heavily p-doped and high-performance device structures. All these further indicate the technological potency of this in situ doping technique as well as p-InSb nanowires for the fabrication of future CMOS electronics.

Original languageEnglish
Pages (from-to)9671-9676
Number of pages6
JournalNanoscale
Volume5
Issue number20
DOIs
Publication statusPublished - Oct 21 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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