Carbon nitride thin films prepared by KrF pulsed excimer laser deposition in NO ambient gas

Hisatomo Miyata, Tamiko Ohshima, Tomoaki Ikegami, Kenji Ebihara, R. K. Thareja

Research output: Contribution to conferencePaperpeer-review

Abstract

Pulsed KrF excimer laser deposition was used to deposit carbon nitride thin films on Si(100) substrate in NO ambient gas. A KrF pulsed excimer laser beam was focused on a graphite target at 45° using focusing lens and quartz window. Thin films were prepared on n-type Si(00) substrate positioned at 40 mm apart from the target. High compensation ratio of 1.02 was obtained for the film deposited at a fluence of 5 J/cm2 in 200 mTorr NO.

Original languageEnglish
PagesI42-I43
Publication statusPublished - 2001
Externally publishedYes
Event4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan
Duration: Jul 15 2001Jul 19 2001

Other

Other4th Pacific Rim Conference on Lasers and Electro-Optics
CountryJapan
CityChiba
Period7/15/017/19/01

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Carbon nitride thin films prepared by KrF pulsed excimer laser deposition in NO ambient gas'. Together they form a unique fingerprint.

Cite this