Carbon nitride thin films prepared by KrF pulsed excimer laser deposition in NO ambient gas

Hisatomo Miyata; Tamiko Ohshima; Tomoaki Ikegami; Kenji Ebihara; R. K. Thareja

Carbon nitride thin films prepared by KrF pulsed excimer laser deposition in NO ambient gas

Hisatomo Miyata, Tamiko Ohshima, Tomoaki Ikegami, Kenji Ebihara, R. K. Thareja

Research output: Contribution to conference › Paper › peer-review

Abstract

Pulsed KrF excimer laser deposition was used to deposit carbon nitride thin films on Si(100) substrate in NO ambient gas. A KrF pulsed excimer laser beam was focused on a graphite target at 45° using focusing lens and quartz window. Thin films were prepared on n-type Si(00) substrate positioned at 40 mm apart from the target. High compensation ratio of 1.02 was obtained for the film deposited at a fluence of 5 J/cm² in 200 mTorr NO.

Original language	English
Pages	I42-I43
Publication status	Published - 2001
Externally published	Yes
Event	4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan Duration: Jul 15 2001 → Jul 19 2001

Other

Other	4th Pacific Rim Conference on Lasers and Electro-Optics
Country/Territory	Japan
City	Chiba
Period	7/15/01 → 7/19/01

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

@conference{7cd9b2323c5946feb5b5e73bcfc1d8b1,

title = "Carbon nitride thin films prepared by KrF pulsed excimer laser deposition in NO ambient gas",

abstract = "Pulsed KrF excimer laser deposition was used to deposit carbon nitride thin films on Si(100) substrate in NO ambient gas. A KrF pulsed excimer laser beam was focused on a graphite target at 45° using focusing lens and quartz window. Thin films were prepared on n-type Si(00) substrate positioned at 40 mm apart from the target. High compensation ratio of 1.02 was obtained for the film deposited at a fluence of 5 J/cm2 in 200 mTorr NO.",

author = "Hisatomo Miyata and Tamiko Ohshima and Tomoaki Ikegami and Kenji Ebihara and Thareja, {R. K.}",

year = "2001",

language = "English",

pages = "I42--I43",

}

TY - CONF

T1 - Carbon nitride thin films prepared by KrF pulsed excimer laser deposition in NO ambient gas

AU - Miyata, Hisatomo

AU - Ohshima, Tamiko

AU - Ikegami, Tomoaki

AU - Ebihara, Kenji

AU - Thareja, R. K.

PY - 2001

Y1 - 2001

N2 - Pulsed KrF excimer laser deposition was used to deposit carbon nitride thin films on Si(100) substrate in NO ambient gas. A KrF pulsed excimer laser beam was focused on a graphite target at 45° using focusing lens and quartz window. Thin films were prepared on n-type Si(00) substrate positioned at 40 mm apart from the target. High compensation ratio of 1.02 was obtained for the film deposited at a fluence of 5 J/cm2 in 200 mTorr NO.

AB - Pulsed KrF excimer laser deposition was used to deposit carbon nitride thin films on Si(100) substrate in NO ambient gas. A KrF pulsed excimer laser beam was focused on a graphite target at 45° using focusing lens and quartz window. Thin films were prepared on n-type Si(00) substrate positioned at 40 mm apart from the target. High compensation ratio of 1.02 was obtained for the film deposited at a fluence of 5 J/cm2 in 200 mTorr NO.

UR - http://www.scopus.com/inward/record.url?scp=0035695896&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035695896&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0035695896

SP - I42-I43

T2 - 4th Pacific Rim Conference on Lasers and Electro-Optics

Y2 - 15 July 2001 through 19 July 2001

ER -

Carbon nitride thin films prepared by KrF pulsed excimer laser deposition in NO ambient gas

Abstract

Other

All Science Journal Classification (ASJC) codes

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