Abstract
We have developed a new method for fabrication of single-crystal SiC-on-insulator using SIMOX (Separation by IMplanted OXygen) substrates. Carbonization of surface Si of SIMOX wafers induced cavities between the SiC and Si layers which resulted in low-quality SiC-on-insulator. On the other hand, crystalline SiC layers were formed on SIMOX substrates without cavities at SiC/Si interfaces by using CVD of SiC on as-implanted SIMOX substrates at 900 °C followed by N2 annealing at 1350 °C.
| Original language | English |
|---|---|
| Pages (from-to) | 297-300 |
| Journal | Materials Science Forum |
| Volume | 338-342 |
| Publication status | Published - 2000 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering