Carbonization of SIMOX substrates for fabrication of single-crystal SiC-on-insulator

S. Harada; Makoto Arita; Yoshifumi Ikoma; T. Motooka

Carbonization of SIMOX substrates for fabrication of single-crystal SiC-on-insulator

S. Harada, Makoto Arita, Yoshifumi Ikoma, T. Motooka

Advanced Materials Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We have developed a new method for fabrication of single-crystal SiC-on-insulator using SIMOX (Separation by IMplanted OXygen) substrates. Carbonization of surface Si of SIMOX wafers induced cavities between the SiC and Si layers which resulted in low-quality SiC-on-insulator. On the other hand, crystalline SiC layers were formed on SIMOX substrates without cavities at SiC/Si interfaces by using CVD of SiC on as-implanted SIMOX substrates at 900 °C followed by N₂ annealing at 1350 °C.

Original language	English
Pages (from-to)	297-300
Journal	Materials Science Forum
Volume	338-342
Publication status	Published - 2000

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Carbonization of SIMOX substrates for fabrication of single-crystal SiC-on-insulator",

abstract = "We have developed a new method for fabrication of single-crystal SiC-on-insulator using SIMOX (Separation by IMplanted OXygen) substrates. Carbonization of surface Si of SIMOX wafers induced cavities between the SiC and Si layers which resulted in low-quality SiC-on-insulator. On the other hand, crystalline SiC layers were formed on SIMOX substrates without cavities at SiC/Si interfaces by using CVD of SiC on as-implanted SIMOX substrates at 900 °C followed by N2 annealing at 1350 °C.",

author = "S. Harada and Makoto Arita and Yoshifumi Ikoma and T. Motooka",

year = "2000",

language = "English",

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pages = "297--300",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications",

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T1 - Carbonization of SIMOX substrates for fabrication of single-crystal SiC-on-insulator

AU - Harada, S.

AU - Arita, Makoto

AU - Ikoma, Yoshifumi

AU - Motooka, T.

PY - 2000

Y1 - 2000

N2 - We have developed a new method for fabrication of single-crystal SiC-on-insulator using SIMOX (Separation by IMplanted OXygen) substrates. Carbonization of surface Si of SIMOX wafers induced cavities between the SiC and Si layers which resulted in low-quality SiC-on-insulator. On the other hand, crystalline SiC layers were formed on SIMOX substrates without cavities at SiC/Si interfaces by using CVD of SiC on as-implanted SIMOX substrates at 900 °C followed by N2 annealing at 1350 °C.

AB - We have developed a new method for fabrication of single-crystal SiC-on-insulator using SIMOX (Separation by IMplanted OXygen) substrates. Carbonization of surface Si of SIMOX wafers induced cavities between the SiC and Si layers which resulted in low-quality SiC-on-insulator. On the other hand, crystalline SiC layers were formed on SIMOX substrates without cavities at SiC/Si interfaces by using CVD of SiC on as-implanted SIMOX substrates at 900 °C followed by N2 annealing at 1350 °C.

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JO - Materials Science Forum

JF - Materials Science Forum

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