Carbonization of SIMOX substrates for fabrication of single-crystal SiC-on-insulator

S. Harada, Makoto Arita, Yoshifumi Ikoma, T. Motooka

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We have developed a new method for fabrication of single-crystal SiC-on-insulator using SIMOX (Separation by IMplanted OXygen) substrates. Carbonization of surface Si of SIMOX wafers induced cavities between the SiC and Si layers which resulted in low-quality SiC-on-insulator. On the other hand, crystalline SiC layers were formed on SIMOX substrates without cavities at SiC/Si interfaces by using CVD of SiC on as-implanted SIMOX substrates at 900 °C followed by N2 annealing at 1350 °C.

    Original languageEnglish
    Pages (from-to)297-300
    JournalMaterials Science Forum
    Volume338-342
    Publication statusPublished - 2000

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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