Results of electrical measurements on 1 MeV O+ implanted n-type GaAs are reported. After annealing the implanted material it is found that the free carrier compenasation rate (k), defined by Favennec as the number of carriers removed per oxygen atom, can be dependent upon both the starting material and the implanted dose.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry