Carrier compensation in O+ implanted n-type GaAs

Tanemasa Asano, P. L.F. Hemment

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Results of electrical measurements on 1 MeV O+ implanted n-type GaAs are reported. After annealing the implanted material it is found that the free carrier compenasation rate (k), defined by Favennec[1] as the number of carriers removed per oxygen atom, can be dependent upon both the starting material and the implanted dose.

Original languageEnglish
Pages (from-to)1089-1090
Number of pages2
JournalSolid-State Electronics
Volume23
Issue number10
DOIs
Publication statusPublished - Jan 1 1980

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electrical measurement
oxygen atoms
Annealing
Oxygen
dosage
Atoms
annealing
Compensation and Redress
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Carrier compensation in O+ implanted n-type GaAs. / Asano, Tanemasa; Hemment, P. L.F.

In: Solid-State Electronics, Vol. 23, No. 10, 01.01.1980, p. 1089-1090.

Research output: Contribution to journalArticle

Asano, Tanemasa ; Hemment, P. L.F. / Carrier compensation in O+ implanted n-type GaAs. In: Solid-State Electronics. 1980 ; Vol. 23, No. 10. pp. 1089-1090.
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