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Carrier compensation in O
+
implanted n-type GaAs
T. Asano
, P. L.F. Hemment
Research output
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›
peer-review
1
Citation (Scopus)
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implanted n-type GaAs'. Together they form a unique fingerprint.
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Material Science
Material
100%
Gallium Arsenide
100%
Physics
Starting
50%
Oxygen Atom
50%