Carrier-concentration-driven superconductor-to-insulator transition in YBa2Cu3O6 + x

K. Semba, A. Matsuda, M. Mukaida

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

We have succeeded in controlling carrier concentration near the superconductor-to-insulator transition by sample annealing under the equilibrium oxygen pressure of YBa2Cu3O6 + x. Near the critical doping, below 60 K, we observed carrier-concentration-driven resistivity scaling of the pulsed-laser-deposited thin film of YBa2Cu3O6 + x indicating the large energy scale of the quantum phase fluctuation. This demonstrates that a considerable area in the phase diagram of the pseudo-gapped underdoped YBa2Cu3O6 + x is in the critical region of the quantum phase transition.

Original languageEnglish
Pages (from-to)904-905
Number of pages2
JournalPhysica B: Condensed Matter
Volume281-282
DOIs
Publication statusPublished - 2000
EventYamada Conference LI - The International Conference on Strongly Correlated Electron Systems (SCES '99) - Nagano, Japan
Duration: Aug 24 1999Aug 28 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Carrier-concentration-driven superconductor-to-insulator transition in YBa<sub>2</sub>Cu<sub>3</sub>O<sub>6 + x</sub>'. Together they form a unique fingerprint.

  • Cite this