Carrier doping in the type VIII clathrate Ba 8Ga 16Sn 30 through Sb substitution

Yasushi Kono, Nobuyuki Ohya, Yuhta Saiga, Koichiro Suekuni, Toshiro Takabatake, Koji Akai, Setsuo Yamamoto

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The type VIII clathrate Ba 8Ga 16Sn 30 has a relatively high figure of merit (ZT) from 200°C to 400°C. Our previous calculations showed that the optimum carrier concentration for high ZT is on the order of 10 20/cm 3 for both p- and n-type samples. The ZT value exceeds unity for the n-type material. However, actual carrier concentrations for synthesized samples were on the order of 10 19/cm 3. With the aim of increasing the carrier concentration, we have synthesized single crystals of Sb-doped Ba 8Ga 16Sn 30. Contrary to our expectation, the Ga content in the crystal increased with the increase in Sb content. In both p- and n-type samples, the carrier concentration was increased, and the power factor for the p-type samples was improved to 1.4 × 10 -2 W/mK 2. These results are discussed in relation to the change in the band structure.

Original languageEnglish
Pages (from-to)845-850
Number of pages6
JournalJournal of Electronic Materials
Volume40
Issue number5
DOIs
Publication statusPublished - May 1 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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