Carrier dynamics in InGaN/GaN SQW structure probed by the transient grating method with subpicosecond pulsed laser

K. Okamoto; A. Kaneta; K. Inoue; Y. Kawakami; M. Terazima; G. Shinomiya; T. Mukai; S. G. Fujita

doi:10.1002/1521-3951(200111)228:1<81::AID-PSSB81>3.0.CO;2-F

Carrier dynamics in InGaN/GaN SQW structure probed by the transient grating method with subpicosecond pulsed laser

K. Okamoto, A. Kaneta, K. Inoue, Y. Kawakami, M. Terazima, G. Shinomiya, T. Mukai, S. G. Fujita

Department of Fundamental Organic Chemistry

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Carrier dynamics in GaN and InGaN/GaN SQW structures were observed by using the transient grating (TG) method with sub-picosecond pulsed laser at room temperature. The diffusion coefficients (D) of photo-created carriers were estimated by the decay rate time of TG signals and the photoluminescence (PL) lifetime. It was found that D depends on the emission wavelength (In composition). The relationship between the emission efficiencies and carrier diffusion was considered in terms of the spatial inhomogeneity of In composition.

Original language	English
Pages (from-to)	81-84
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	228
Issue number	1
DOIs	https://doi.org/10.1002/1521-3951(200111)228:1<81::AID-PSSB81>3.0.CO;2-F
Publication status	Published - Nov 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-3951(200111)228:1<81::AID-PSSB81>3.0.CO;2-F

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abstract = "Carrier dynamics in GaN and InGaN/GaN SQW structures were observed by using the transient grating (TG) method with sub-picosecond pulsed laser at room temperature. The diffusion coefficients (D) of photo-created carriers were estimated by the decay rate time of TG signals and the photoluminescence (PL) lifetime. It was found that D depends on the emission wavelength (In composition). The relationship between the emission efficiencies and carrier diffusion was considered in terms of the spatial inhomogeneity of In composition.",

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T1 - Carrier dynamics in InGaN/GaN SQW structure probed by the transient grating method with subpicosecond pulsed laser

AU - Okamoto, K.

AU - Kaneta, A.

AU - Inoue, K.

AU - Kawakami, Y.

AU - Terazima, M.

AU - Shinomiya, G.

AU - Mukai, T.

AU - Fujita, S. G.

PY - 2001/11

Y1 - 2001/11

N2 - Carrier dynamics in GaN and InGaN/GaN SQW structures were observed by using the transient grating (TG) method with sub-picosecond pulsed laser at room temperature. The diffusion coefficients (D) of photo-created carriers were estimated by the decay rate time of TG signals and the photoluminescence (PL) lifetime. It was found that D depends on the emission wavelength (In composition). The relationship between the emission efficiencies and carrier diffusion was considered in terms of the spatial inhomogeneity of In composition.

AB - Carrier dynamics in GaN and InGaN/GaN SQW structures were observed by using the transient grating (TG) method with sub-picosecond pulsed laser at room temperature. The diffusion coefficients (D) of photo-created carriers were estimated by the decay rate time of TG signals and the photoluminescence (PL) lifetime. It was found that D depends on the emission wavelength (In composition). The relationship between the emission efficiencies and carrier diffusion was considered in terms of the spatial inhomogeneity of In composition.

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Carrier dynamics in InGaN/GaN SQW structure probed by the transient grating method with subpicosecond pulsed laser

Abstract

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