Carrier dynamics in InGaN/GaN SQW structure probed by the transient grating method with subpicosecond pulsed laser

K. Okamoto, A. Kaneta, K. Inoue, Y. Kawakami, M. Terazima, G. Shinomiya, T. Mukai, S. G. Fujita

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Carrier dynamics in GaN and InGaN/GaN SQW structures were observed by using the transient grating (TG) method with sub-picosecond pulsed laser at room temperature. The diffusion coefficients (D) of photo-created carriers were estimated by the decay rate time of TG signals and the photoluminescence (PL) lifetime. It was found that D depends on the emission wavelength (In composition). The relationship between the emission efficiencies and carrier diffusion was considered in terms of the spatial inhomogeneity of In composition.

Original languageEnglish
Pages (from-to)81-84
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume228
Issue number1
DOIs
Publication statusPublished - Nov 1 2001

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this