Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides

Kazuki Nagashima; Takeshi Yanagida; Masaki Kanai; Umberto Celano; Sakon Rahong; Gang Meng; Fuwei Zhuge; Yong He; Bae Ho Park; Tomoji Kawai

doi:10.1063/1.4826558

Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides

Kazuki Nagashima, Takeshi Yanagida, Masaki Kanai, Umberto Celano, Sakon Rahong, Gang Meng, Fuwei Zhuge, Yong He, Bae Ho Park, Tomoji Kawai

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

We report a carrier type dependence on the spatial asymmetry of unipolar resistive switching for various metal oxides, including NiO_x, CoO_x, TiO_2-x, YSZ, and SnO_2- _x. n-type oxides show a unipolar resistive switching at the anode side whereas p-type oxides switch at the cathode side. During the forming process, the electrical conduction path of p-type oxides extends from the anode to cathode while that of n-type oxides forms from the cathode to anode. The carrier type of switching oxide layer critically determines the spatial inhomogeneity of unipolar resistive switching during the forming process possibly triggered via the oxygen ion drift.

Original language	English
Article number	173506
Journal	Applied Physics Letters
Volume	103
Issue number	17
DOIs	https://doi.org/10.1063/1.4826558
Publication status	Published - Oct 21 2013
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4826558

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title = "Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides",

abstract = "We report a carrier type dependence on the spatial asymmetry of unipolar resistive switching for various metal oxides, including NiOx, CoOx, TiO2-x, YSZ, and SnO2- x. n-type oxides show a unipolar resistive switching at the anode side whereas p-type oxides switch at the cathode side. During the forming process, the electrical conduction path of p-type oxides extends from the anode to cathode while that of n-type oxides forms from the cathode to anode. The carrier type of switching oxide layer critically determines the spatial inhomogeneity of unipolar resistive switching during the forming process possibly triggered via the oxygen ion drift.",

author = "Kazuki Nagashima and Takeshi Yanagida and Masaki Kanai and Umberto Celano and Sakon Rahong and Gang Meng and Fuwei Zhuge and Yong He and {Ho Park}, Bae and Tomoji Kawai",

note = "Funding Information: This study was supported by NEXT. T.K. was supported by FIRST program. B.H.P. was supported by the NRF grant funded by the Korea government (MSIP) (No. 2013R1A3A2042120). K.N. was supported by Grant-in-Aid for Challenging Exploratory Research (No. 24651138).",

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doi = "10.1063/1.4826558",

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T1 - Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides

AU - Nagashima, Kazuki

AU - Yanagida, Takeshi

AU - Kanai, Masaki

AU - Celano, Umberto

AU - Rahong, Sakon

AU - Meng, Gang

AU - Zhuge, Fuwei

AU - He, Yong

AU - Ho Park, Bae

AU - Kawai, Tomoji

N1 - Funding Information: This study was supported by NEXT. T.K. was supported by FIRST program. B.H.P. was supported by the NRF grant funded by the Korea government (MSIP) (No. 2013R1A3A2042120). K.N. was supported by Grant-in-Aid for Challenging Exploratory Research (No. 24651138).

PY - 2013/10/21

Y1 - 2013/10/21

N2 - We report a carrier type dependence on the spatial asymmetry of unipolar resistive switching for various metal oxides, including NiOx, CoOx, TiO2-x, YSZ, and SnO2- x. n-type oxides show a unipolar resistive switching at the anode side whereas p-type oxides switch at the cathode side. During the forming process, the electrical conduction path of p-type oxides extends from the anode to cathode while that of n-type oxides forms from the cathode to anode. The carrier type of switching oxide layer critically determines the spatial inhomogeneity of unipolar resistive switching during the forming process possibly triggered via the oxygen ion drift.

AB - We report a carrier type dependence on the spatial asymmetry of unipolar resistive switching for various metal oxides, including NiOx, CoOx, TiO2-x, YSZ, and SnO2- x. n-type oxides show a unipolar resistive switching at the anode side whereas p-type oxides switch at the cathode side. During the forming process, the electrical conduction path of p-type oxides extends from the anode to cathode while that of n-type oxides forms from the cathode to anode. The carrier type of switching oxide layer critically determines the spatial inhomogeneity of unipolar resistive switching during the forming process possibly triggered via the oxygen ion drift.

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Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides

Abstract

All Science Journal Classification (ASJC) codes

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