Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides

Kazuki Nagashima, Takeshi Yanagida, Masaki Kanai, Umberto Celano, Sakon Rahong, Gang Meng, Fuwei Zhuge, Yong He, Bae Ho Park, Tomoji Kawai

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We report a carrier type dependence on the spatial asymmetry of unipolar resistive switching for various metal oxides, including NiOx, CoOx, TiO2-x, YSZ, and SnO2- x. n-type oxides show a unipolar resistive switching at the anode side whereas p-type oxides switch at the cathode side. During the forming process, the electrical conduction path of p-type oxides extends from the anode to cathode while that of n-type oxides forms from the cathode to anode. The carrier type of switching oxide layer critically determines the spatial inhomogeneity of unipolar resistive switching during the forming process possibly triggered via the oxygen ion drift.

Original languageEnglish
Article number173506
JournalApplied Physics Letters
Volume103
Issue number17
DOIs
Publication statusPublished - Oct 21 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Nagashima, K., Yanagida, T., Kanai, M., Celano, U., Rahong, S., Meng, G., Zhuge, F., He, Y., Ho Park, B., & Kawai, T. (2013). Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides. Applied Physics Letters, 103(17), [173506]. https://doi.org/10.1063/1.4826558