Catalytic oxidative coupling of methane assisted by electric power over a semiconductor catalyst

Keisuke Tanaka; Yasushi Sekine; Kazumasa Oshima; Yoshitaka Tanaka; Masahiko Matsukata; Eiichi Kikuchi

doi:10.1246/cl.2012.351

Catalytic oxidative coupling of methane assisted by electric power over a semiconductor catalyst

Keisuke Tanaka, Yasushi Sekine, Kazumasa Oshima, Yoshitaka Tanaka, Masahiko Matsukata, Eiichi Kikuchi

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Oxidative coupling of methane (OCM) on La ₂O ₃ semiconductor catalysts at 423 K external temperature was investigated. DC power supplied from two electrodes in a catalyst bed enabled stable and selective production of C ₂H ₆ and C ₂H ₄ over Sr-La ₂O ₃ (Sr/La = 1/200 and 1/20), but plasma reactions proceeded over other catalysts. The electrical conductivity of the semiconductor catalyst was important for controlling this reaction. A high yield of C2 (49% selectivity, 51.3% O ₂ conversion) was obtained using 2.7 W of electricity at a lower external temperature (423 K).

Original language	English
Pages (from-to)	351-353
Number of pages	3
Journal	Chemistry Letters
Volume	41
Issue number	4
DOIs	https://doi.org/10.1246/cl.2012.351
Publication status	Published - 2012
Externally published	Yes

All Science Journal Classification (ASJC) codes

Chemistry(all)

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10.1246/cl.2012.351

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title = "Catalytic oxidative coupling of methane assisted by electric power over a semiconductor catalyst",

abstract = "Oxidative coupling of methane (OCM) on La 2O 3 semiconductor catalysts at 423 K external temperature was investigated. DC power supplied from two electrodes in a catalyst bed enabled stable and selective production of C 2H 6 and C 2H 4 over Sr-La 2O 3 (Sr/La = 1/200 and 1/20), but plasma reactions proceeded over other catalysts. The electrical conductivity of the semiconductor catalyst was important for controlling this reaction. A high yield of C2 (49% selectivity, 51.3% O 2 conversion) was obtained using 2.7 W of electricity at a lower external temperature (423 K).",

author = "Keisuke Tanaka and Yasushi Sekine and Kazumasa Oshima and Yoshitaka Tanaka and Masahiko Matsukata and Eiichi Kikuchi",

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language = "English",

volume = "41",

pages = "351--353",

journal = "Chemistry Letters",

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publisher = "The Chemical Society of Japan",

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T1 - Catalytic oxidative coupling of methane assisted by electric power over a semiconductor catalyst

AU - Tanaka, Keisuke

AU - Sekine, Yasushi

AU - Oshima, Kazumasa

AU - Tanaka, Yoshitaka

AU - Matsukata, Masahiko

AU - Kikuchi, Eiichi

PY - 2012

Y1 - 2012

N2 - Oxidative coupling of methane (OCM) on La 2O 3 semiconductor catalysts at 423 K external temperature was investigated. DC power supplied from two electrodes in a catalyst bed enabled stable and selective production of C 2H 6 and C 2H 4 over Sr-La 2O 3 (Sr/La = 1/200 and 1/20), but plasma reactions proceeded over other catalysts. The electrical conductivity of the semiconductor catalyst was important for controlling this reaction. A high yield of C2 (49% selectivity, 51.3% O 2 conversion) was obtained using 2.7 W of electricity at a lower external temperature (423 K).

AB - Oxidative coupling of methane (OCM) on La 2O 3 semiconductor catalysts at 423 K external temperature was investigated. DC power supplied from two electrodes in a catalyst bed enabled stable and selective production of C 2H 6 and C 2H 4 over Sr-La 2O 3 (Sr/La = 1/200 and 1/20), but plasma reactions proceeded over other catalysts. The electrical conductivity of the semiconductor catalyst was important for controlling this reaction. A high yield of C2 (49% selectivity, 51.3% O 2 conversion) was obtained using 2.7 W of electricity at a lower external temperature (423 K).

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DO - 10.1246/cl.2012.351

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JO - Chemistry Letters

JF - Chemistry Letters

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ER -

Catalytic oxidative coupling of methane assisted by electric power over a semiconductor catalyst

Abstract

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