TY - JOUR
T1 - Cathode buffer composed of fullerene-ethylenediamine adduct for an organic solar cell
AU - Kimoto, Yoshinori
AU - Akiyama, Tsuyoshi
AU - Fujita, Katsuhiko
N1 - Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/2
Y1 - 2017/2
N2 - We developed a fullerene-ethylenediamine adduct (C60P-DC) for a cathode buffer material in organic bulk heterojunction solar cells, which enhance the open-circuit voltage (Voc). The evaporative spray deposition using ultra dilute solution (ESDUS) technique was employed to deposit the buffer layer onto the organic active layer to avoid damage during the deposition. By the insertion of a C60P-DC buffer layer, Voc and power conversion efficiency (PCE) were increased from 0.41 to 0.57 V and from 1.65 to 2.10%, respectively. The electron-only device with the C60P-DC buffer showed a much lower current level than that without the buffer, indicating that the Voc increase is caused not by vacuum level shift but by hole blocking. The curve fitting of current density-voltage (J-V) characteristics to the equivalent circuit with a single diode indicated that the decrease in reversed saturation current by hole blocking increased caused the Voc.
AB - We developed a fullerene-ethylenediamine adduct (C60P-DC) for a cathode buffer material in organic bulk heterojunction solar cells, which enhance the open-circuit voltage (Voc). The evaporative spray deposition using ultra dilute solution (ESDUS) technique was employed to deposit the buffer layer onto the organic active layer to avoid damage during the deposition. By the insertion of a C60P-DC buffer layer, Voc and power conversion efficiency (PCE) were increased from 0.41 to 0.57 V and from 1.65 to 2.10%, respectively. The electron-only device with the C60P-DC buffer showed a much lower current level than that without the buffer, indicating that the Voc increase is caused not by vacuum level shift but by hole blocking. The curve fitting of current density-voltage (J-V) characteristics to the equivalent circuit with a single diode indicated that the decrease in reversed saturation current by hole blocking increased caused the Voc.
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U2 - 10.7567/JJAP.56.021601
DO - 10.7567/JJAP.56.021601
M3 - Article
AN - SCOPUS:85011628983
VL - 56
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 2
M1 - 021601
ER -