Cathodoluminescence induced in oxides by high-energy electrons: Effects of beam flux, electron energy, and temperature

Jean Marc Costantini, Tatsuhiko Ogawa, AKM Saiful I. Bhuian, Kazuhiro Yasuda

Research output: Contribution to journalArticle

Abstract

The cathodoluminescence (CL) induced in four oxide single crystals (α-Al2O3, ZrO2: Y or YSZ, MgAl2O4, and TiO2) by high-energy electrons from 400 keV to 1250 keV was studied as a function of beam parameters (flux and energy). The main CL bands are related to F center (oxygen vacancy) formation by elastic collisions above the threshold displacement energy of oxygen atoms. The beam-intensity dependence is interpreted on the basis of a kinetic-rate model involving F-center formation and annihilation. The temperature effect was also followed from 110 K to 300 K. A broad maximum is found for all bands at about 200 K for sapphire, whereas a monotonous increase with temperature is observed for YSZ. The plots of CL intensity versus temperature are mainly interpreted by the interplay between the thermal dependence of thermalized free-carrier trapping rates and luminescence efficiency. Finally, the dependence of CL intensity on the primary electron energy for F centers in YSZ showing a maximum at about 600 keV is explained on the basis of the interplay between point-defect formation and secondary-electron energy spectra production.

LanguageEnglish
Pages108-118
Number of pages11
JournalJournal of Luminescence
Volume208
DOIs
Publication statusPublished - Apr 1 2019

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Cathodoluminescence
cathodoluminescence
high energy electrons
Oxides
yttria-stabilized zirconia
color centers
Electrons
electron energy
Fluxes
Temperature
oxides
Oxygen
Aluminum Oxide
Luminescence
Point defects
Oxygen vacancies
Hot Temperature
Thermal effects
point defects
temperature effects

All Science Journal Classification (ASJC) codes

  • Biophysics
  • Atomic and Molecular Physics, and Optics
  • Chemistry(all)
  • Biochemistry
  • Condensed Matter Physics

Cite this

Cathodoluminescence induced in oxides by high-energy electrons : Effects of beam flux, electron energy, and temperature. / Costantini, Jean Marc; Ogawa, Tatsuhiko; Bhuian, AKM Saiful I.; Yasuda, Kazuhiro.

In: Journal of Luminescence, Vol. 208, 01.04.2019, p. 108-118.

Research output: Contribution to journalArticle

@article{ab7470ccf1924c8e99b377e604a0ed80,
title = "Cathodoluminescence induced in oxides by high-energy electrons: Effects of beam flux, electron energy, and temperature",
abstract = "The cathodoluminescence (CL) induced in four oxide single crystals (α-Al2O3, ZrO2: Y or YSZ, MgAl2O4, and TiO2) by high-energy electrons from 400 keV to 1250 keV was studied as a function of beam parameters (flux and energy). The main CL bands are related to F center (oxygen vacancy) formation by elastic collisions above the threshold displacement energy of oxygen atoms. The beam-intensity dependence is interpreted on the basis of a kinetic-rate model involving F-center formation and annihilation. The temperature effect was also followed from 110 K to 300 K. A broad maximum is found for all bands at about 200 K for sapphire, whereas a monotonous increase with temperature is observed for YSZ. The plots of CL intensity versus temperature are mainly interpreted by the interplay between the thermal dependence of thermalized free-carrier trapping rates and luminescence efficiency. Finally, the dependence of CL intensity on the primary electron energy for F centers in YSZ showing a maximum at about 600 keV is explained on the basis of the interplay between point-defect formation and secondary-electron energy spectra production.",
author = "Costantini, {Jean Marc} and Tatsuhiko Ogawa and Bhuian, {AKM Saiful I.} and Kazuhiro Yasuda",
year = "2019",
month = "4",
day = "1",
doi = "10.1016/j.jlumin.2018.12.045",
language = "English",
volume = "208",
pages = "108--118",
journal = "Journal of Luminescence",
issn = "0022-2313",
publisher = "Elsevier",

}

TY - JOUR

T1 - Cathodoluminescence induced in oxides by high-energy electrons

T2 - Journal of Luminescence

AU - Costantini, Jean Marc

AU - Ogawa, Tatsuhiko

AU - Bhuian, AKM Saiful I.

AU - Yasuda, Kazuhiro

PY - 2019/4/1

Y1 - 2019/4/1

N2 - The cathodoluminescence (CL) induced in four oxide single crystals (α-Al2O3, ZrO2: Y or YSZ, MgAl2O4, and TiO2) by high-energy electrons from 400 keV to 1250 keV was studied as a function of beam parameters (flux and energy). The main CL bands are related to F center (oxygen vacancy) formation by elastic collisions above the threshold displacement energy of oxygen atoms. The beam-intensity dependence is interpreted on the basis of a kinetic-rate model involving F-center formation and annihilation. The temperature effect was also followed from 110 K to 300 K. A broad maximum is found for all bands at about 200 K for sapphire, whereas a monotonous increase with temperature is observed for YSZ. The plots of CL intensity versus temperature are mainly interpreted by the interplay between the thermal dependence of thermalized free-carrier trapping rates and luminescence efficiency. Finally, the dependence of CL intensity on the primary electron energy for F centers in YSZ showing a maximum at about 600 keV is explained on the basis of the interplay between point-defect formation and secondary-electron energy spectra production.

AB - The cathodoluminescence (CL) induced in four oxide single crystals (α-Al2O3, ZrO2: Y or YSZ, MgAl2O4, and TiO2) by high-energy electrons from 400 keV to 1250 keV was studied as a function of beam parameters (flux and energy). The main CL bands are related to F center (oxygen vacancy) formation by elastic collisions above the threshold displacement energy of oxygen atoms. The beam-intensity dependence is interpreted on the basis of a kinetic-rate model involving F-center formation and annihilation. The temperature effect was also followed from 110 K to 300 K. A broad maximum is found for all bands at about 200 K for sapphire, whereas a monotonous increase with temperature is observed for YSZ. The plots of CL intensity versus temperature are mainly interpreted by the interplay between the thermal dependence of thermalized free-carrier trapping rates and luminescence efficiency. Finally, the dependence of CL intensity on the primary electron energy for F centers in YSZ showing a maximum at about 600 keV is explained on the basis of the interplay between point-defect formation and secondary-electron energy spectra production.

UR - http://www.scopus.com/inward/record.url?scp=85059117526&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059117526&partnerID=8YFLogxK

U2 - 10.1016/j.jlumin.2018.12.045

DO - 10.1016/j.jlumin.2018.12.045

M3 - Article

VL - 208

SP - 108

EP - 118

JO - Journal of Luminescence

JF - Journal of Luminescence

SN - 0022-2313

ER -